A Scheme of Quantum Tunnel Field Effect Transistor Based on Armchair Graphene Nano-Ribbon

Vali, Mehran; Moezi, Negin; Heidari, Hadi; Bayani, Amir Hossein

doi:10.1149/2162-8777/ac2329

Cited by 3 publications

(1 citation statement)

References 33 publications

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“…Changes in the gate dielectric, gate material work function, channel doping, and voltage difference engineering are examples of these techniques. [10][11][12][13][14][15][16][17] The dual-material gate approach 12,18 is the most intriguing of all of these ideas. In this method, the gate metal is physically divided into two sections by the different work functions.…”

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confidence: 99%

A Ballistic Transport Nanodevice Based on Graphene Nanoribbon FET by Enhanced Productivity for Both Low-Voltage and Radio-Frequency Scopes

Anvarifard¹,

Ramezani²,

Ghoreishi³

2022

ECS J. Solid State Sci. Technol.

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The top performance in both the low-voltage and radio frequency (RF) scopes has been nominated for an unique nanodevice made from a graphene nanoribbon with an extremely short gate length (7.5 nm) in this study. Two distinct material engineering options were used, yielding some interesting outcomes. Due to the use of an ultrascale GNRFET in this study, the band structure non-linearity in the Dirac point and the energy-position dependent effective mass model for dual material gate architectures were examined for the first time. The NEGF formalism is used to carry out both the low-voltage and RF research using a three-dimensional (3D) Poisson equation. Low-voltage high performance has been validated by monitoring the key petameters in the terms of on current (Ion), off current (Ioff), Ion/Ioff ratio, subthreshold swing, and drain induced barrier lowering (DIBL) for the proposed device as compared to other structures under the study. The RF performance is examined by evaluation of essential parameters in the cases of parasitic gate capacitance, intrinsic cut-off frequency, intrinsic delay time, and transconductance. In addition, the performance of non-linearity and RF intermodulation distortion has been analyzed for all devices under investigation in order to attain the best attitude toward the suggested device.

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confidence: 99%

A Ballistic Transport Nanodevice Based on Graphene Nanoribbon FET by Enhanced Productivity for Both Low-Voltage and Radio-Frequency Scopes

Anvarifard¹,

Ramezani²,

Ghoreishi³

2022

ECS J. Solid State Sci. Technol.

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Emerging field effect transistor architectures—part I

Ahangari

Heidari

2023

Nanoelectronics : Physics, Materials and Devices

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Impact of JL structure on analog/RF parameters and 6 T SRAM memory circuits of GNRFETs

Ahmad,

Chandra Mech

2024

Phys. Scr.

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The primary challenge in shrinking transistors is maintaining narrow source/drain (S/D) junctions with sharp doping gradients, necessitating advanced S/D and channel engineering techniques. The junctionless (JL) transistor design eliminates the need for junctions and doping gradients, simplifying manufacturing. This study uses process simulations to explore the impact of the JL configuration on the analog and radio frequency (RF) performance of double-gate (DG) graphene nanoribbon field-effect transistors (GNRFETs). The findings show that JL DG GNRFETs slightly outperform conventional DG GNRFETs, with a 15% increase in transconductance (gm) and a 10.3% higher cut off frequency (- fT). Additionally, the JL device exhibits a 16.2% higher gain-frequency product (GFP). The investigation employs self-consistent atomistic simulations within the nonequilibrium Green’s function (NEGF) framework, solving the Schrödinger equation under ballistic conditions. A high-performance hybrid 6T static random-access memory (SRAM) is included to assess circuit-level variations and performance improvements.

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A Scheme of Quantum Tunnel Field Effect Transistor Based on Armchair Graphene Nano-Ribbon

Cited by 3 publications

References 33 publications

A Ballistic Transport Nanodevice Based on Graphene Nanoribbon FET by Enhanced Productivity for Both Low-Voltage and Radio-Frequency Scopes

A Ballistic Transport Nanodevice Based on Graphene Nanoribbon FET by Enhanced Productivity for Both Low-Voltage and Radio-Frequency Scopes

Emerging field effect transistor architectures—part I

Impact of JL structure on analog/RF parameters and 6 T SRAM memory circuits of GNRFETs

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