A Schmitt Trigger Based Oscillatory Neural Network for Reservoir Computing

Zhang, Ting; Haider, Mohammad Rafiqul

doi:10.11648/j.jeee.20200801.11

Cited by 1 publication

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The accuracy of the proposed model in the noise condition is calculated by using the relative root mean square (RMS) error formula. The relative RMS is determined by the equation (17).…”

Section: I-v Characterization Of Novel Memristormentioning

confidence: 99%

“…Due to its unique electrical current-voltage (I-V) characteristics and novel simple structure, it has been widely used in different applications [8,9,13]. Resistive random access memory (ReRAM), flash memory, chaos circuits, biomimetic circuits, electrochemical metallization memories, magneto-resistive memory, cellular neural networks, recurrent neural networks, ultra-wideband receivers, adaptive filters, oscillators, programmable threshold comparators, Schmitt triggers, amplifiers, and logic gates have been developed based on memristor [14][15][16][17][18][19][20][21][22]. Different mathematical models of memristor have been reported in the literature; however, these models are not sufficiently accurate in terms of their physical dynamics [23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Phenomenological modeling of memristor fabricated through screen printing based on the structure of Ag/Polymer/Cu

Zafar¹,

Awais²,

Shehzad³

et al. 2023

Preprint

View full text Add to dashboard Cite

The attributes of a memristor such as non-volatile, simple structure, no leakage current, and fast switching speed have unfolded enormous opportunities for various analog and digital applications. It is imperative to develop an accurate physical model of the memristor in order to design digital applications. The hitherto published memristor modeling approaches do not match with the practical memristor dynamics. A new model is developed by considering Schottky contact at the metal-insulator-metal (MIM) interfaces. In this research work, a novel memristor is also fabricated to validate the proposed model. A bead polymer based on methyl methacrylate and n-butyl methacrylate (MMBM) is firstly used to explore the resistive switching properties of the device. A cost-effective screen printing technique is first demonstrated to deposit the resistive switching layer for the fabrication of the memristor. The resistive switching behavior is observed in the sandwiched layer with a silver (Ag) as a top electrode and copper (Cu) as a bottom electrode. Surface morphology and electrical characterizations of the fabricated device are carried out by scanning electron microscope and 2 probe resistivity measurement. The results validate the formation of the Schottky barriers at the MIM interfaces of the fabricated device. The proposed model is compared with the device described in this paper having an error of 0.7609 (in terms of the relative root-meansquare error). Moreover, the NOR logic gate is simulated for the circuit simulation of the proposed model. This will pave a new path for the digital design applications based on the memristor.

show abstract

“…The accuracy of the proposed model in the noise condition is calculated by using the relative root mean square (RMS) error formula. The relative RMS is determined by the equation (17).…”

Section: I-v Characterization Of Novel Memristormentioning

confidence: 99%