A Schottky diode and FET‐paralleled analogue predistorter for 5G small‐cell base stations

Abstract

This letter presents an analogue predistorter (APD) named Schottky diode (SD) and field effect transistor (FET)-paralleled APD (SDFP-APD) for the fifth-generation (5G) mobile system, which is composed of an FET paralleled with two SDs. The simulation results show that the SDFP-APD has the best compression compensation for the radio frequency power amplifier (RFPA) among the SD-APD, the FET-APD and the SDFP-APD. Furthermore, the measurement results illustrate that the SDFP-APD can improve the adjacent channel leakage ratio of the RFPA with the best linearisation performance among the three APDs and reduce the error vector magnitude while applying a 100-MHz bandwidth 5G new radio signal. The proposed SDPF-APD can be a promising linearisation technique for 5G small-cell base stations.

Twin nonlinearity generator‐based analog predistorter for small‐cell power amplifiers

“…The topology of the SNG-APD is simple and easily to be implemented, but the linearization performance is not F I G U R E 1 Equivalent circuit model of a typical nonlinearity generator good enough. 18 Thus, an augmented APD, that is, TNG-APD is proposed in this article. The TNG-APD is composed of two cascaded transistors and a phase shifter.…”

“…The topology of the SNG‐APD is simple and easily to be implemented, but the linearization performance is not good enough 18 . Thus, an augmented APD, that is, TNG‐APD is proposed in this article.…”

“…The signal used in reference 17 is a 160 MHz bandwidth LTE signal at 2GHz and ACPR improvement is over 10 dB, but the RF‐APD is very complex and large. In reference 18, a 100 MHz bandwidth 256‐QAM 5G‐NR signal is used in the experiment, but the ACPR of the 3.5 GHz RFPA under the test is only reduced by 12 dB. Therefore, the linearization performance of the proposed TNG‐APD is with competitive.…”