2020
DOI: 10.1002/mop.32660
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A 30‐GHz low‐power CMOS LNA for 5G communication systems

Abstract: This paper presents theoretical analysis and design procedures for low noise amplifiers (LNAs) in advanced CMOS technologies. For demonstration, a 30‐GHz LNA designed for 5G millimeter‐wave communication systems was fabricated in a 65‐nm CMOS process. It provides a power gain of 22.6 dB with a noise figure of 3.2 dB while drawing 7.3 mW from a 1.2 V supply.

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Cited by 5 publications
(1 citation statement)
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“…Traditionally, mm-wave LNAs usually use transmission lines as matching elements, which were relatively intuitive and easy to implement, but the circuit area was relatively large unless multiple meanders for reducing size. 1,2 Furthermore, in single-ended circuit design, spiral inductor structures can be used for compact circuits, [3][4][5][6] and the coupling between multiple inductors can also be utilized to further reduce the chip area with good performance. 7,8 However, the complex coupling exacerbates the mutual influence between the front and rear stages of the circuit, resulting in a decrease in the unilateralization of the circuit and requiring more repetitive tuning.…”
Section: Introductionmentioning
confidence: 99%
“…Traditionally, mm-wave LNAs usually use transmission lines as matching elements, which were relatively intuitive and easy to implement, but the circuit area was relatively large unless multiple meanders for reducing size. 1,2 Furthermore, in single-ended circuit design, spiral inductor structures can be used for compact circuits, [3][4][5][6] and the coupling between multiple inductors can also be utilized to further reduce the chip area with good performance. 7,8 However, the complex coupling exacerbates the mutual influence between the front and rear stages of the circuit, resulting in a decrease in the unilateralization of the circuit and requiring more repetitive tuning.…”
Section: Introductionmentioning
confidence: 99%