“…Pseudospark-based devices have remarkable features including a hold-off voltage of 10's kV, current capacity of 10's kA, trigger jitter of about 1 ns, repetition rate of several kHz, and electrode erosion rate of about 10 μg/C [6]. Thus, various applications were developed, including electron beam sources developed by scholars from the United Kingdom [7], India [8], and China [9][10][11], extreme ultraviolet light sources developed by scholars from Germany [12] and France [13], high power switches developed by scholars from Russia [14,15] and India [16][17][18], et al To further improve the performances of these devices, considerable efforts have been devoted to the explorations of mechanisms underlying pseudospark discharge. Several sub-phases of the discharge process with distinctive features were clarified, including (I) pre-breakdown phase, (II) hollow cathode discharge (HCD), (III) superdense glow discharge (SGD), and (IV) high current phase with arc cathode spots [4,5,19,20].…”