A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection

Zhu, Hongtu; Cheng, Xinbin; Xia, Yonghui; Xu, Di; Liu, Tiantian; Zhang, Zhenwei

doi:10.1587/elex.17.20200019

Cited by 3 publications

(2 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Armature winding short-circuit(AWSC) fault is one of the most common faults in VFRMs [7], and the early features of the AWSC fault are not obvious. If the AWSC fault is not diagnosed and treated quickly in the early stage, it may damage the entire insulation of the power generation system and cause severe security threats [8,9,10,11]. Therefore, accurate AWSC fault detection of VFRMs is highly necessary.…”

Section: Introductionmentioning

confidence: 99%

Characteristic analysis and diagnosis of short-circuit fault in armature winding of four-phase variable flux reluctance machine

Zhao

Zhang

et al. 2022

IEICE Electron. Express

View full text Add to dashboard Cite

To improve the reliability of the variable flux reluctance machines (VFRMs) in the early stages, this letter proposes a novel fault feature for armature winding short-circuit (AWSC) fault in four-phase VFRMs. First, the harmonic characteristics of field induced voltage are researched theoretically in detail under normal and AWSC conditions. Then, a diagnosis method based on the harmonics of the field induced voltage is proposed and analyzed by simulation. Finally, related experiments are conducted to verify the proposed method. The proposed diagnosis method is simple and feasible, which can realize reliable protection of the power generation system for safe operation.

show abstract

Section: Introductionmentioning

confidence: 99%

Characteristic analysis and diagnosis of short-circuit fault in armature winding of four-phase variable flux reluctance machine

Zhao

Zhang

et al. 2022

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…Moreover, the current density is very high due to the small die size, which leads to its SC withstand time as short as 3us, while it is typically 10us for Si IGBT [16,17]. The commercial gate drivers for SiC MOSFET still use the DESAT protection method at present [18,19,20,21,22,23,24,25], where a blanking time is used to avoid false trigger during switching transients, and it is determined by the blanking capacitor and the DESAT reference voltage. Furthermore, the blanking time is always set a longer time to avoid the false trigger in practical applications.…”

Section: Introductionmentioning

confidence: 99%

A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time

Liu

Quan

Zhou

et al. 2021

IEICE Electron. Express

View full text Add to dashboard Cite

This paper proposed a desaturation (DESAT) short circuit (SC) protection circuit for SiC MOSFET, where a blanking time setting module and an SC detection module are designed. The fall time of the drain-source voltage (VDS) for each switching period of SiC MOSFET is recorded and set as the blanking time for the hard switching fault (HSF) detection in the next switching period. Consequently, the detection delay for HSF is self-adjustive and can respond quickly to the operating state of SiC MOSFET. FPGA and discrete components are used to implement the proposed circuit. The function of the proposed circuit is verified using the double pulse test. The experiment results show that the blanking time automatically increases with the increase of load current. The default detection delay of the proposed protection circuit is set 240ns for HSF and can be adjusted during the subsequent switching period. So in the test under a 400V bus voltage, the detection delay is 240ns for HSF at the first switching period. And for HSF occurs at the second switching period, the detection delay is 200ns adjusted according to the operating state of the first switching period. Meanwhile, the detection delay for fault under load (FUL) is 72 ns.

show abstract

Review of IGBT Intelligent Gate Drive and Protection Strategies

Zhang,

Li,

Ding

et al. 2024

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection

Cited by 3 publications

References 25 publications

Characteristic analysis and diagnosis of short-circuit fault in armature winding of four-phase variable flux reluctance machine

Characteristic analysis and diagnosis of short-circuit fault in armature winding of four-phase variable flux reluctance machine

A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time

Review of IGBT Intelligent Gate Drive and Protection Strategies

Contact Info

Product

Resources

About