A Self‐Aligned High‐Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Ho, Kuan-I; Boutchich, Mohamed; Su, Ching Yuan; Moreddu, Rosalia; Marianathan, Eugene Sebastian Raj; Montès, L.; Lai, Chao−Sung

doi:10.1002/adma.201502544

Cited by 53 publications

(34 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Nitrogen dopant incorporated into the graphene lattice via CVD is mostly found in pyrrolic and pyridinic configurations, which are always accompanied by an increase in defect densities and an increased I D / I G ratio to values ranging from 0.3 to 2 (few-layered N-doped graphene shows a lower I D / I G due to a high vertical phonon vibration nature). Both nitrogen incorporation (ionic impurities, long-range scattering) [ 44 ] and its accompanied increase in defect densities (bonding disorder and vacancies, short-range scattering) [ 45 ] degrade graphene carrier conductivity and mobility [ 20 ]. Recently, George Sarau et al realized N-doped graphene with a low defect density via the post-annealing approach in which the nitrogen atoms are mostly arranged in pyridinic configurations [ 23 ].…”

Section: Resultsmentioning

confidence: 99%

N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique

et al. 2017

Self Cite

View full text Add to dashboard Cite

N-doped graphene with low intrinsic defect densities was obtained by combining a solid source doping technique and chemical vapor deposition (CVD). The solid source for N-doping was embedded into the copper substrate by NH3 plasma immersion. During the treatment, NH3 plasma radicals not only flattened the Cu substrate such that the root-mean-square roughness value gradually decreased from 51.9 nm to 15.5 nm but also enhanced the nitrogen content in the Cu substrate. The smooth surface of copper enables good control of graphene growth and the decoupling of height fluctuations and ripple effects, which compensate for the Coulomb scattering by nitrogen incorporation. On the other hand, the nitrogen atoms on the pre-treated Cu surface enable nitrogen incorporation with low defect densities, causing less damage to the graphene structure during the process. Most incorporated nitrogen atoms are found in the pyrrolic configuration, with the nitrogen fraction ranging from 1.64% to 3.05%, while the samples exhibit low defect densities, as revealed by Raman spectroscopy. In the top-gated graphene transistor measurement, N-doped graphene exhibits n-type behavior, and the obtained carrier mobilities are greater than 1100 cm2·V−1·s−1. In this study, an efficient and minimally damaging n-doping approach was proposed for graphene nanoelectronic applications.

show abstract

Section: Resultsmentioning

confidence: 99%

N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…Ultrahigh carrier mobility is a key aspect of graphene that motivates its usage for technological applications of next‐generation electronic devices and for fundamental studies of Dirac fermions . However, the carrier mobility of graphene on SiO 2 ‐covered silicon wafers is much lower than intrinsic values predicted by theory .…”

mentioning

confidence: 99%

Epitaxially Self‐Assembled Alkane Layers for Graphene Electronics

Lee

Choi

et al. 2016

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Carbon atoms align themselves in a hexagonal lattice perfectly. Pristine graphene has no bandgap; therefore, it acts as a semimetal [42]. Currently available methods aiming for pristine graphene include mechanical exfoliation [43] and liquid exfoliation.…”

Section: The Function Of Photoelectrode and Its Requirementsmentioning

confidence: 99%

Recent Progress of Graphene-Based Photoelectrode Materials for Dye-Sensitized Solar Cells

Patil

Rashidi

Wang

et al. 2019

International Journal of Photoenergy

View full text Add to dashboard Cite

Graphite with a single atomic layer known as graphene shows great capability in energy conversion and storage devices. Dye-sensitized solar cells (DSSCs) have attracted intense interests due to offering high photo-to-electric conversion efficiencies. DSSCs are built from a photoelectrode (a dye-sensitized nanocrystalline semiconductor), an electrolyte with redox couples, and a counterelectrode. In this review article, we outline the strategies to enhance the efficiency and reduce the cost by introducing graphene into the DSSCs as the photoelectrode. First, the development of DSSCs and the properties of graphene are briefly described. Then, the applications of graphene-based materials for photoelectrodes (transparent electrode, semiconductor layer, and dye sensitizer) in DSSCs are deeply discussed. Finally, an outlook for graphene materials in DSSCs is provided.

show abstract

A Self‐Aligned High‐Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Cited by 53 publications

References 59 publications

N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique

N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique

Epitaxially Self‐Assembled Alkane Layers for Graphene Electronics

Recent Progress of Graphene-Based Photoelectrode Materials for Dye-Sensitized Solar Cells

Contact Info

Product

Resources

About