A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed

Fan, Ming-Ming; Liu, Kewei; Chen, Xing; Zhang, Zhenzhong; Li, Binghui; Shen, Dezhen

doi:10.1039/c6ra28736k

Cited by 45 publications

(20 citation statements)

References 45 publications

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“…Wavelength dependence measurements confirm a high UV-C response and absence of photoresponse in the UV-A range, as shown in Figure e, where a sharp photo-responsivity cut-off at 260 nm is noted with a rejection value R 244nm / R 325nm = 9.6 × 10 3 (∼10 4 ), showing strong photoresponse in the UV-C range and demonstrating selectively solar-blind UV-C characteristics as a negligible response in the UV-B (290 nm) and UV-A (at 325 nm) regions is observed. The high rejection ratio of our device compared to the previous values reported in the literature − ,, (as shown in Table ) demonstrated superior solar-blind detection characteristics.…”

Section: Resultssupporting

confidence: 56%

Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids

Alwadai

Mitra

Hedhili

et al. 2021

ACS Appl. Mater. Interfaces

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Smart solar-blind UV-C band photodetectors suffer from low responsivity in a self-powered mode. Here, we address this issue by fabricating a novel enhanced solar-blind UV-C photodetector array based on solution-processed n-ZnO quantum dots (QDs) functionalized by p-CuO micro-pyramids. Self-assembled catalyst-free p-CuO micro-pyramid arrays are fabricated on a pre-ablated Si substrate by pulsed laser deposition without a need for a catalyst layer or seeding, while the solution-processed n-ZnO QDs are synthesized by the femtosecond-laser ablation in liquid technique. The photodetector is fabricated by spray-coating ZnO QDs on a CuO micro-pyramid array. The photodetector performance is optimized via a p–n junction structure as both p-ZnO QDs and p-CuO micro-pyramid layers are characterized by wide band gap energies. Two photodetectors (with and without CuO micro-pyramids) are fabricated to show the role of p-CuO in enhancing the device performance. The n-ZnO QD/p-CuO micro-pyramid/Si photodetector is characterized by a superior photo-responsivity of ∼956 mA/W at 244 nm with a faster photoresponse (<80 ms) and 260 nm cut-off compared to ZnO QDs/Si photodetectors, confirming that the p-CuO micro-pyramids enhance the device performance. The self-powered photoresponse with a high photo-responsivity of ∼29 mA/W is demonstrated. These high-responsivity solar-bind UV-C photodetector arrays can be used for a wide range of applications.

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Section: Resultssupporting

confidence: 56%

Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids

Alwadai

Mitra

Hedhili

et al. 2021

ACS Appl. Mater. Interfaces

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“…6 Comparison of the photoresponse parameters under zero bias of the GaN/Sn:Ga 2 O 3 pn junction UV photodetector in this work and other previously reported self-powered devices is listed in Table 1. 37,38 The GaN/Sn:Ga 2 O 3 pn junction heterojunction UV photodetector shows a larger responsivity, detecivity, and I photo /I dark ratio than those of other UV selfpowered photodetectors. The UV/visible rejection ratio and photoresponse speed are comparable to those of the previously reported UV self-powered photodetectors.…”

Section: Resultsmentioning

confidence: 99%

Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga₂O₃ pn Junction

et al. 2018

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Ultraviolet (UV) radiation has a variety of impacts including the health of humans, the production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self-powered UV photodetectors can measure and monitor UV radiation without any power consumption. However, the current low photoelectric performance of these detectors has hindered their practical use. In our study, a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga 2 O 3 pn junction was generated by depositing a Sn-doped n-type Ga 2 O 3 thin film onto a p-type GaN thick film. The responsivity at 254 nm reached up to 3.05 A/W without a power supply and had a high UV/visible rejection ratio of R 254 nm /R 400 nm = 5.9 × 10 3 and an ideal detectivity at 1.69 × 10 13 cm•Hz 1/2 •W −1 , which is well beyond the level of previous self-powered UV photodetectors. Moreover, our device also has a low dark current (1.8 × 10 −11 A), a high I photo /I dark ratio (∼10 4 ), and a fast photoresponse time of 18 ms without bias. These outstanding performance results are attributed to the rapid separation of photogenerated electron−hole pairs driven by a high built-in electric field in the interface depletion region of the GaN/ Sn:Ga 2 O 3 pn junction. Our results provide an improved and easy route to constructing high-performance self-powered UV photodetectors that can potentially replace traditional high-energy-consuming UV detection systems. KEYWORDS: self-powered, ultraviolet photodetector, GaN/Sn:Ga 2 O 3 pn junction, superhigh photoresponsivity, 3.05 A/W, potential barrier U ltraviolet radiation has a significant impact on humankind. Some benefits are UV's ability to facilitate the synthesis of vitamin D, kill germs, and treat or prevent rickets when our skin is exposed to moderate UV light. 1 However, it can cause cataracts and skin cancer and accelerate the aging process due to an excessive amount of UV radiation. 1,2 Additionally, UV radiation strongly affects the production of crops and the lifetime of buildings. Fortunately, UV radiation can be measured and monitored using semiconductor UV photodetectors based on Einstein's photoelectric effect, which transforms UV radiation to measurable electronic signals. After decades of steady development, modern UV photodetectors, with high performances in photoresponsivity, signal-to-noise ratios, stability, and speed, have gained interest recently for their applications in environmental monitoring, advanced communications, air purification, leak detection, space research, etc. 3−13 Unfortunately, to acquire reasonable detectivity, an external electric field is applied to photodetectors to separate the photogenerated electron−hole pairs. 5−13 Therefore, external power sources are generally necessary. This makes photodetectors overall uneconomical and complex. On the contrary, self-powered photodetectors can help solve the energy issues and have attracted significant attention. 14−19 Compared to traditional photodetectors, self-powered structures, based on the photovoltaic effect su...

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“…In the past decade, the rapid advances in developing mature ultrawide-bandgap semiconductor technologies (e.g. Ga2O3, ZnxMg1−xO, AlxGa1−xN, and diamond) have opened up new opportunities for the realization of many highly sensitive DUV photodetectors with various device architectures [6][7][8][9]. Among these material systems with extremely wide bandgaps, AlxGa1−xN and ZnxMg1−xO alloys can be identified as providing high-sensitivity solar-blind DUV light detection, but only when they contain high amounts of Al and Mg.…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed

et al. 2021

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There is an emerging need for high-sensitivity solar-blind deep ultraviolet (DUV) photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga 2 O 3 nanostructures have been developed, their practical applications are greatly limited by their slow response speed as well as low specific detectivity. Here, the successful fabrication of two-/three-dimensional (2D/3D) graphene (Gr)/PtSe 2 /β-Ga 2 O 3 Schottky junction devices for high-sensitivity solar-blind DUV photodetectors is demonstrated. Benefitting from the high-quality 2D/3D Schottky junction, the vertically stacked structure, and the superior-quality transparent graphene electrode for effective carrier collection, the photodetector is highly sensitive to DUV light illumination and achieves a high responsivity of 76.2 mA/W, a large on/off current ratio of ~ 10 5 , along with an ultra-high ultraviolet (UV)/visible rejection ratio of 1.8 × 10 4 . More importantly, it has an ultra-fast response time of 12 s and a remarkable specific detectivity of ~ 10 13 Jones. Finally, an excellent DUV imaging capability has been identified based on the Gr/PtSe 2 /β-Ga 2 O 3 Schottky junction photodetector, demonstrating its great potential application in DUV imaging systems.

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A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed

Abstract: Realization of Ag/ZnMgO/ZnO photodetectors provides a feasible route to develop self-powered solar-blind UV photodetectors with fast response speed.

Cited by 45 publications

References 45 publications

Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids

Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids

Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga₂O₃ pn Junction

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed

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A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed

Abstract: Realization of Ag/ZnMgO/ZnO photodetectors provides a feasible route to develop self-powered solar-blind UV photodetectors with fast response speed.

Cited by 45 publications

References 45 publications

Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids

Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids

Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed

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Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga₂O₃ pn Junction