A Self‐Powered ZnO‐Nanorod/CuSCN UV Photodetector Exhibiting Rapid Response

Abstract

The pre‐existing Fermi level alignment between ZnO and CuSCN semiconductors gives rise to the two key elements needed for a self‐powered, binary‐response UV‐ sensor: photovoltaic behavior and low turn‐on bias. Nanosecond response times, self‐powered performance, and long‐term stability, coupled with scalable, inexpensive fabrication on the nanoscale, offer currently unmatched progression towards self‐sufficient nanoscale systems.

Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance

“…A similar device fabricated using pH 6 synthesised ZnOnanorods shows a good photocurrent response to 355 nm pulse during the same experiment. 41 The nanorods grown at pH 11 (14 lm) reported here are much longer than those grown at pH 6 (2 lm), and additionally have a dense, compact layer at the base (closest to the FTO) approximately 4 lm thick. The absorption coefficient of ZnO at 355 nm is very high as it is well above the main band-edge absorption onset at $385 nm.…”

“…However, the photocurrent of $5 lA at 6 mW cm À2 irradiance is comparable to those self-powered devices fabricated at higher temperatures. 28,[38][39][40][41] This demonstrates the potential for flexible devices using as-produced ZnO material synthesised at temperatures <100 C.…”

“…28,[38][39][40][41] These photodetectors often rely on the photovoltaic behavior to generate a photocurrent response at 0 V. The rise (s r ) and fall (s f ) response times (defined as the time required for the photocurrent to increase/decrease from 10% to 90%/90% to 10% of its maximum value, respectively) are important parameters when considering the photodetector effectiveness. A recent example reported by Deng et al 42 used opposing heterostructures of p-type polyaniline nanowires sandwiched between two ZnO nanorod arrays.…”

Гетероструктура Для Обращенного Диода На Основе Электроосажденного В Импульсном Режиме Наномассива Оксида Цинка И Изготовленной Методом SILAR Пленки Иодида Меди

“…Во всех этих рабо-тах гетероструктуру p-CuI/n-ZnO рассматривают как основу прозрачных и полупрозрачных ультрафиолето-вых датчиков диодного типа [14,15] или биполярных пленочных диодов [16][17][18][19]. Нам не удалось отыскать в литературе данных о создании обращенного диода с такой гетероструктурой.…”

Designing CdS/Se heterojunction as high-performance self-powered UV-visible broadband photodetector

“…To date, Schottky, p-n, and p-i-n junctions have been utilized to construct self-powered photodetectors. [7][8][9][10] At zero bias voltage, these detectors can convert the incident light into an electrical signal by exploiting the photovoltaic effect. In particular, p-n junction-based photodiodes have attracted wide interest due to the simple device configuration and facile fabrication process.…”