A semi-empirical cad model of ferroelectric capacitor for circuit simulation

Lim, Kyu-Nam; Kim, Kyu Hyun; Hong, Songcheol; Lee, Kywro

doi:10.1080/10584589708012985

Cited by 15 publications

(6 citation statements)

References 10 publications

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“…( 4) for details). Another modelling approach relates to the polarization switching current of the ferroelectric [111,112,113,114]. Here the current is modelled based on the rate equations of the switching dipoles [114], pre-calculated polarization current [113] and first order relaxation processes [111,112].…”

Section: Circuit Model Of Ferroelectric Devicesmentioning

confidence: 99%

“…Another modelling approach relates to the polarization switching current of the ferroelectric [111,112,113,114]. Here the current is modelled based on the rate equations of the switching dipoles [114], pre-calculated polarization current [113] and first order relaxation processes [111,112]. On the other side the parallel elements method [115,116] emulates the structure of a ferroelectric material as a parallel circuit of several ferroelectric domains.…”

Section: Circuit Model Of Ferroelectric Devicesmentioning

confidence: 99%

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A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

et al. 2017

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Abstract. The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, the origin of ferroelectricity and in-depth studies of device characteristics are needed. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for a novel, superior device. Therefore, in this paper a holistic modeling approaches which lead to a better understanding of ferroelectric memories based on hafnium and zirconium oxide is addressed. Starting from describing the stabilization of the ferroelectric phase within the binary oxides via physical modeling the physical mechanisms of the ferroelectric devices are reviewed. Besides, limitations and modeling of the multi-level operation and switching kinetics of ultimately scaled devices as well as the necessity for Landau-Khalatnikov approach are discussed. Furthermore, a device level model of ferroelectric memory devices that can be used to study the array implementation and their operational schemes are addressed. Finally, a circuit model of the ferroelectric memory device is presented and potential further applications of ferroelectric devices are outlined.

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Section: Circuit Model Of Ferroelectric Devicesmentioning

confidence: 99%

Section: Circuit Model Of Ferroelectric Devicesmentioning

confidence: 99%

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

et al. 2017

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“…The opposite is true when the external voltage is negative. In the voltage domain, an analogy forward transition to the PD state is given by rf, similar to the Fermi-Dirac (FD) statistics [19]. Vc is the coercive voltage (similar to the Fermi level), and V0 is the domain distribution parameter (similar to the thermal voltage in FD statistics).…”

Section: The State Transition Frameworkmentioning

confidence: 99%

A Dynamic Compact Model for Ferroelectric Capacitance

Zhang¹

2021

Preprint

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A non-quasi-static model for ferroelectric capacitance is developed in this letter. A state transition in the voltage and time domains between two polarization states is formulated first. The quasi-static model is derived from the state transition of voltage domain, and supports the minor loops. Different from the Preisach model, an initial state is supported, and the modulated coercive voltages are responsible for minor loops. The non-quasi -static model is then derived with the state transition in the time domain, similar to a relaxation approximation in MOSFET modeling. The non-quasi-static model reproduces the saturation loop, minor loops, the frequency-dependent characteristics of measured ferroelectric capacitances, with their origins explained from polarization switching relaxation. The pulse width dependent switching is well reproduced with the model.

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“…Many models have been proposed for the calculation of hysteresis loops [12][13][14][15][16]. We used the model proposed by Lim et al [16] for calculating switching charges. Detail equations used in this study which are considering the induced voltage on paraelectric layers are as follows:…”

Section: Calculation Schemementioning

confidence: 99%

Influence of Frozen a-Domains on Hysteresis Properties of Ferroelectric Thin-Film Capacitors

Okamura

Shiosaki

2004

Integrated Ferroelectrics

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The influence of frozen a-domains which work as paraelectric layers on hysteresis properties was investigated using a double-layers model consisted of a ferroelectric layer and a paraelectric layer in series. As a result, it is found that a few frozen a-domains significantly degrade the hysteresis properties because switching charges derived by an applied voltage induce the voltage on the paraelectric layers and reduce the voltage applied to the ferroelectric layers. Strange behavior in the shift of hysteresis loops can be also explained by this model. The existence of frozen a-domains may be one of reasons why single phase ferroelectric thin-film capacitors with no interface layers sometimes show poor hysteresis properties.

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A semi-empirical cad model of ferroelectric capacitor for circuit simulation

Cited by 15 publications

References 10 publications

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

A Dynamic Compact Model for Ferroelectric Capacitance

Influence of Frozen a-Domains on Hysteresis Properties of Ferroelectric Thin-Film Capacitors

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