A Semiempirical SPICE Model for n-Type Conventional CNTFETs

Gelao, G.; Marani, Roberto; Diana, Roberto; Perri, Anna Gina

doi:10.1109/tnano.2010.2049499

Cited by 73 publications

(113 citation statements)

References 7 publications

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“…L G,eff is the effective gate length. The resistance parameters of all parallel m-tubes are given by r mta = r mta,1 δ mt , a mt0 = a mt0,1 δ mt (15) with the average resistance value of a single m-tube r mta,1 and a mt0,1 as model parameters. The prefactor of the m-tube related capacitance is scaled as…”

Section: A Device Structure Dependence-internal Transistormentioning

confidence: 99%

“…The models in [10]- [14] only focus on digital applications and low voltages and, thus, the static drain current while modeling of the nonlinear tube charge is neglected or far too simplistic for RF purposes. The models in [10], [12], and [15] describe the static drain current with an explicit solution of the Landauer equation, assuming a bias-independent average transmission factor. As shown in [9], even the corresponding first-order derivative and thus the low-frequency small-signal behavior of fabricated devices become grossly incorrect.…”

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confidence: 99%

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A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Schröter

Haferlach

Pacheco‐Sanchez

et al. 2015

IEEE Trans. Electron Devices

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A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators. IndexTerms-Carbon nanotube field-effect transistor (CNTFET), compact transistor modeling, high-frequency circuit design.

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Section: A Device Structure Dependence-internal Transistormentioning

confidence: 99%

mentioning

confidence: 99%

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Schröter

Haferlach

Pacheco‐Sanchez

et al. 2015

IEEE Trans. Electron Devices

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“…The drain current in the ballistic transport is derived by using Landauer formula as mentioned in Ref. [13] and given as

I = \frac{4 q}{h} \int_{{qV}_{si} + {qV}_{cnt} - Δ_{normalp 1}}^{{italicqV}_{si}} T_{total} ([], f ((), E + {qV}_{S}) - f ((), E + {qV}_{ds})) \partial E

…”

Section: Analytical Modelmentioning

confidence: 99%

“…After performing the integration and simplifying the resulting equation, the final expression for the drain current is given as

I = \frac{4 q}{h} italickT ([], ln ({}, 1 + e^{\frac{- (() Δ p_{1} - {italicqV}_{cnt})}{KT}}) - ln ({}, 1 + e^{\frac{- (Δ p_{1} - {italicqV}_{cnt} + {italicqV}_{ds})}{italicKT}}) + ln ({}, \frac{1 + e^{\frac{- {qV}_{ds}}{KT}}}{2}))

where Δ p 1 is the energy of first sub‐band in CNT. All the presented analytical expressions in the literature ignore the third term of the right‐hand side of Equation , but this term is dominating term for nanoscale CNTFET devices …”

Section: Analytical Modelmentioning

confidence: 99%

A comprehensive analytical study of electrical properties of carbon nanotube field‐effect transistor for future nanotechnology

Singh

Murthy

Prabu

2017

Int J Numerical Modelling

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This paper discusses a comprehensive analytical study of electrical properties of single‐wall conventional carbon nanotube field‐effect transistor (CNTFET) devices of subthreshold swing (SS), transconductance (gm), and extension resistance. The analytical expressions for SS and gm have been derived based on channel modulated potential. In the study, it was observed that SS value of the CNTFET device is equal to 60 mV/decade, which is smaller than the conventional and double gate metal‐oxide‐semiconductor field‐effect transistors. The subthreshold swing degrades at larger tube's diameter and gate‐source voltage due to increased source‐drain leakage current. Carbon nanotube field‐effect transistor devices achieve larger gm at large gate‐source voltage, which has a disadvantage of reducing the allowable voltage swing at the drain. The extension resistance of the device falls with diameter of the tube.

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“…An alternative model can be derived using the Landauer formula [15]. However, this procedure requires using numerical methods to obtain closed-form solutions, what makes it difficult its use in circuit design [16], [17].…”

Section: A Cnt Transistorsmentioning

confidence: 99%

Overview of carbon-based circuits and systems

Rodriguez

Rusu

Rosa

2015

2015 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper presents an overview of the state of the art on carbon-based circuits and systems made up of carbon nanotubes and graphene transistors. A tutorial description of the most important devices and their potential benefits and limitations is given, trying to identify their suitability to implement analog and digital circuits and systems. Main electrical models reported so far for the design of carbon-based field-effect devices are surveyed, and the main sizing parameters required to implement such devices in practical integrated circuits are analyzed. The solutions proposed by cutting-edge integrated circuits and devices are discussed, identifying current trends, challenges and opportunities for the circuits and systems community 1 .978-1-4799-8391-9/15/$31.00 ©2015 IEEE

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A Semiempirical SPICE Model for n-Type Conventional CNTFETs

Cited by 73 publications

References 7 publications

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

A comprehensive analytical study of electrical properties of carbon nanotube field‐effect transistor for future nanotechnology

Overview of carbon-based circuits and systems

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