A sensitive charge scanning probe based on silicon single electron transistor

Su, Lina; Li, Xinxing; Qin, Hua; Gu, Xiaofeng

doi:10.1088/1674-4926/37/4/044008

Cited by 2 publications

(1 citation statement)

References 21 publications

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“…[1,2] In such nanoscale dimensions, the electronic transport characteristics of the device can perform quite differently from those in bulk silicon. [3,4] Indeed, the reduction of device dimensions enhances the importance of quantum mechanical effects. [2,5,6] For example, the conductance oscillation of nanowire transistors caused by inter-sub-band scattering in one-dimensional (1D) transport, [7,8] the single-electron tunneling current and quantum interference originated from the impurity energy levels of the dopants.…”

Section: Introductionmentioning

confidence: 99%

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

Guo¹,

Han²,

Zhang³

et al. 2022

Chinese Phys. B

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We investigate the influence of source and drain bias voltages (V DS) on the quantum sub-band transport spectrum in the 10-nm width N-typed junctionless nanowire transistor at the low temperature of 6 K. We demonstrate that the transverse electric field introduced from V DS has a minor influence on the threshold voltage of the device. The transverse electric field plays the role of amplifying the gate restriction effect of the channel. The one-dimensional (1D)-band dominated transport is demonstrated to be modulated by V DS in the saturation region and the linear region, with the sub-band energy levels in the channel (E channel) intersecting with Fermi levels of the source (E fS) and the drain (E fD) in turn as V g increases. The turning points from the linear region to the saturation region shift to higher gate voltages with V DS increase because the higher Fermi energy levels of the channel required to meet the situation of E fD = E channel. We also find that the bias electric field has the effect to accelerate the thermally activated electrons in the channel, equivalent to the effect of thermal temperature on the increase of electron energy. Our work provides a detailed description of the bias-modulated quantum electronic properties, which will give a more comprehensive understanding of transport behavior in nanoscale devices.

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Section: Introductionmentioning

confidence: 99%

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

Guo¹,

Han²,

Zhang³

et al. 2022

Chinese Phys. B

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Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications

et al. 2020

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Single-electron tunneling transistors (SETs) and boxes (SEBs) exploit the phenomenon of Coulomb blockade to achieve unprecedented charge sensitivities. Single-electron boxes, however, despite their simplicity compared to SETs, have rarely been used for practical applications. The main reason for that is that unlike a SET where the gate voltage controls conductance between the source and the drain, an SEB is a two terminal device that requires either an integrated SET amplifier or high-frequency probing of its complex admittance by means of radio frequency reflectometry (RFR). The signal to noise ratio (SNR) for a SEB is small, due to its much lower admittance compared to a SET and thus matching networks are required for efficient coupling ofSEBs to an RFR setup. To boost the signal strength by a factor of N (due to a random offset charge) SEBs can be connected in parallel to form arrays sharing common gates and sources. The smaller the size of the SEB, the larger the charging energy of a SEB enabling higher operation temperature, and using devices with a small footprint (<0.01 µm2), a large number of devices (>1000) can be assembled into an array occupying just a few square microns. We show that it is possible to design SEB arrays that may compete with an SET in terms of sensitivity. In this, we tested SETs using RF reflectometry in a configuration with no DC through path (“DC-decoupled SET” or DCD SET) along with SEBs connected to the same matching network. The experiment shows that the lack of a path for a DC current makes SEBs and DCD SETs highly electrostatic discharge (ESD) tolerant, a very desirable feature for applications. We perform a detailed analysis of experimental data on SEB arrays of various sizes and compare it with simulations to devise several ways for practical applications of SEB arrays and DCD SETs.

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A sensitive charge scanning probe based on silicon single electron transistor

Cited by 2 publications

References 21 publications

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications

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