A setup for arc-free reactive DC sputter deposition of Al-O-N

Fischer, Maria; Trant, Mathis; Thorwarth, Kerstin; Patscheider, Jörg; Hug, Hans J.

doi:10.1016/j.surfcoat.2019.01.082

Cited by 2 publications

(4 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The deposition parameters are summarized in Table 1 and detailed in the supplementary material (SM). Instabilities typically occurring in reactive sputter processes with O 2 could be avoided by our modified sputter system setup described in [10].…”

Section: Al-o-n Thin Film Preparation and Chemical Analysismentioning

confidence: 99%

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Fischer

Trant

Thorwarth

et al. 2019

Science and Technology of Advanced Materials

Self Cite

View full text Add to dashboard Cite

Optically transparent, colorless Al-O-N and Al-Si-O-N coatings with discretely varied O and Si contents were fabricated by reactive direct current magnetron sputtering (R-DCMS) from elemental Al and Si targets and O2 and N2 reactive gases. The Si/Al content was adjusted through the electrical power on the Si and Al targets, while the O/N content was controlled through the O2 flow piped to the substrate in addition to the N2 flow at the targets. The structure and morphology of the coatings were studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM), while the elemental composition was obtained from Rutherford backscattering spectrometry (RBS) and heavy ion elastic recoil detection analysis (ERDA). The chemical states of the elements in the coatings were analyzed by X-ray photoelectron spectroscopy (XPS). Based on analytical results, a model describing the microstructural evolution of the Al-O-N and also previously studied Al-Si-N [1, 2, 3, 4] coatings with O and Si content, respectively, is established. The universality of the microstructural evolution of these coatings with the concentration of the added element is attributed to the extra valence electron (e–) that must be incorporated into the AlN wurtzite host lattice. In the case of Al-O-N, this additional valence charge arises from the e – acceptor O replacing N in the AlN wurtzite lattice, while the e – donor Si substituting Al fulfills that role in the Al-Si-N system. In view of future applications of ternary Al-O-N and quaternary Al-Si-O-N transparent protective coatings, their mechanical properties such as residual stress (σ), hardness (HD) and Young’s modulus (E) were obtained from the curvature of films deposited onto thin substrates and by nanoindentation, respectively. Moderate compressive stress levels between −0.2 and −0.5 GPa, which suppress crack formation and film-substrate delamination, could be obtained together with HD values around 25 GPa.

show abstract

Section: Al-o-n Thin Film Preparation and Chemical Analysismentioning

confidence: 99%

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Fischer

Trant

Thorwarth

et al. 2019

Science and Technology of Advanced Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…For the DC sputter deposition of films with high O contents, a special gas flow setup was implemented in the sputter chamber to avoid oxygen poisoning of the Al targets. 3 The crystallinity of the films, in particular the c-axis lattice dimension, was investigated by symmetric XRD measurements. As described in detail in our recent work, 9 the Al-O-N films show a microstructural evolution with increasing O content that is distinguished by three distinct O concentration regimes, comparable to those found in our earlier work on the Al-Si-N system.…”

Section: Methodsmentioning

confidence: 99%

“…The O composition was determined by Rutherford backscattering and refined by elastic recoil detection analysis (RBS/ERDA). For the DC sputter deposition of films with high O contents, a special gas flow setup was implemented in the sputter chamber to avoid oxygen poisoning of the Al targets . The crystallinity of the films, in particular the c -axis lattice dimension, was investigated by symmetric XRD measurements.…”

Section: Experimental and Computational Proceduresmentioning

confidence: 99%

See 1 more Smart Citation

Mapping the Structure of Oxygen-Doped Wurtzite Aluminum Nitride Coatings from Ab Initio Random Structure Search and Experiments

Gasparotto

Fischer

Scopece

et al. 2021

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Machine learning is changing how we design and interpret experiments in materials science. In this work, we show how unsupervised learning, combined with ab initio random structure searching, improves our understanding of structural metastability in multicomponent alloys. We focus on the case of Al-O-N alloys where the formation of aluminum vacancies in wurtzite AlN upon the incorporation of substitutional oxygen can be seen as a general mechanism of solids where crystal symmetry is reduced to stabilize defects. The ideal AlN wurtzite crystal structure occupation cannot be matched due to the presence of an aliovalent hetero-element into the structure. The traditional interpretation of the c-lattice shrinkage in sputter-deposited Al-O-N films from X-ray diffraction (XRD) experiments suggests the existence of a solubility limit at 8 at % oxygen content. Here, we show that such naive interpretation is misleading. We support XRD data with accurate ab initio modeling and dimensionality reduction on advanced structural descriptors to map structure–property relationships. No signs of a possible solubility limit are found. Instead, the presence of a wide range of non-equilibrium oxygen-rich defective structures emerging at increasing oxygen contents suggests that the formation of grain boundaries is the most plausible mechanism responsible for the lattice shrinkage measured in Al-O-N sputtered films. We further confirm our hypothesis using positron annihilation lifetime spectroscopy.

show abstract

A setup for arc-free reactive DC sputter deposition of Al-O-N

Cited by 2 publications

References 34 publications

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films

Mapping the Structure of Oxygen-Doped Wurtzite Aluminum Nitride Coatings from Ab Initio Random Structure Search and Experiments

Contact Info

Product

Resources

About