A Seven-Octave Broadband LNA MMIC Using Bandwidth Extension Techniques and Improved Active Load

Hu, Jianquan; Ma, Kaixue; Mou, Shouxian; Meng, Fanman

doi:10.1109/tcsi.2018.2803299

Cited by 54 publications

(26 citation statements)

References 49 publications

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“…The negative effect of C ds is neglected at the lower frequency, but it has high impact at GigaHertz frequencies. Gain reduction issues are solved by eliminating the parasitic capacitance or utilizing that as a circuit component . C gs and C gd have been mitigated by shunt ‐ resistive feedback and cascode techniques.…”

Section: Techniques Used For Gain Improvementmentioning

confidence: 99%

“…Multistage LNA is picked to achieve higher gain. Cascode configuration, g m boosting, capacitive cross‐coupling (CCC), shunt resistive feedback, dual inductive peaking techniques, active load implementation, supply voltage optimization, number of fingers adjustment, and positive feedback design have been employed to get optimum gain in LNAs. NF of LNA is depended on the first stage of multistage LNA.…”

Section: Introductionmentioning

confidence: 99%

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Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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A comparative study on recent works on low noise amplifiers (LNAs) designed to be operated at mobile communication band is performed in this article. Here, specifications of different generations of mobile communication are listed, which are considered to classify recent works on LNAs. Even though gain and noise figure (NF) are the primary parameters of LNA; other parameters like power, linearity, bandwidth, and area also get importance. Due to this, optimization techniques handpicked for all those parameters are discussed. The inverse relation between gain and NF is exploited to achieve low noise and high gain together. While increasing the gain, power consumption is increased by drain current. Each LNA is found as good in terms of gain and other parameters to satisfy the requirements. The figure of merit is opted to find the performance of each LNA, and the comparison is performed. The best parameters reported in the comparison are 31.53 dB of gain, 0.7 dB of NF, 0.03 mw of power consumption, 18.14 dBm of third-order input intercept point (IIP3), 24 GHz bandwidth and 0.0052 mm 2 of area at different frequencies and technology nodes. In this survey, as per the optimized FoM for mobile communication, crosscoupled common gate differential LNA, which was designed to be operated at 0.3 to 2.96 GHz gives better results among CMOS LNAs.

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Section: Techniques Used For Gain Improvementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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“…Furthermore, the inductor L 1 is used to compensate for the roll-off of the output impedance of the cascode topology, thus enhancing the gain in high operation frequency bands [15].…”

Section: Design and Analysis Of The Uwb Lnamentioning

confidence: 99%

“…Advancements in wireless communication technology have prompted the demand for multi-octave broadband amplifiers for application in high data rate transmission, ultrawideband (UWB) systems, high-resolution radars, and instrumentations where a broadband LNA is a crucial component [1,2,3,4]. For designing UWB amplifiers, Darlington configurations [5,6,7], feedback techniques [8,9,10,11,12,13], inductive-peaking techniques [14,15,16,17], and distributed amplifiers (DAs) [18,19,20,21,22,23,24] are the most popular approaches. Researchers in [5] reported broadband feedback Darlington amplifiers with bandwidth enhancement.…”

Section: Introductionmentioning

confidence: 99%

“…A broadband gallium-nitride (GaN) LNA using a modified resistive-feedback topology is reported in [8]. A 0.1-20 GHz UWB LNA with the combined techniques of shunt-resistive feedback, dual inductive-peaking techniques and an improved active load is reported in [15]. The study in [18] reported a tapered, distributed LNA that can provide a lower broadband average NF compared to a uniform DA by optimal tapering of the gate and drain transmission lines and transistors.…”

Section: Introductionmentioning

confidence: 99%

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A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique

Yang

Rong

et al. 2019

IEICE Electron. Express

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This letter presents the design and fabrication of a five-octave broadband low noise amplifier (LNA) using 0.1-µm GaAs pseudomorphic high-electron mobility transistor (pHEMT) technology. The multi-peaking bandwidth enhancement and noise reduction technique is proposed for a cascode topology to significantly improve the performance of the LNA. The fabricated LNA achieves a −3 dB bandwidth of 1-32 GHz with an average gain of 12.2 dB, an excellent noise figure (NF) of 1.9-2.6 dB, and an output-referred 1 dB compression point (OP 1dB) of 10.2-12.7 dBm with good input/output matching over the entire bandwidth. To the best of the authors' knowledge, these results demonstrate the lowest room-temperature NF ever reported for fully integrated MMIC amplifiers with a bandwidth of 1 to more than 30 GHz.

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Analysis and design of a 1.7‐ to 27.1‐GHz low‐noise amplifier

2022

Micro & Optical Tech Letters

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This letter illustrates a 1.7-to 27.1-GHz single-stage cascode low-noise amplifier (LNA) with high and flat gain response. In the presented LNA, to obtain high and flat gain response in the broad bandwidth, the Micro-strip type pHEMT is utilized as the common-source stage so as to alleviate the gain bandwidth degradation caused by parasitic parameters. Meanwhile, multiple inductive-peaking inductors are employed to enhance the gain. By optimizing the combination of several bandwidth extension techniques, the experimental results indicate that the exhibited LNA achieves high average gain up to 14.6 dB with ±1.5 dB variation, 2.4 dB typical noise figure, and 14-dBm OP 1dB in the frequency range from 1.7 to 27.1 GHz. Fabricated by using 0.15-μm GaAs pHEMT process, the presented LNA occupies a chip area of 0.96 mm 2 .broadband amplifier, GaAs pseudomorphic high electron-mobility transistor (pHEMT), gain enhancement techniques, low-noise amplifier (LNA), monolithic microwave integrated circuit (MMIC)

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A Seven-Octave Broadband LNA MMIC Using Bandwidth Extension Techniques and Improved Active Load

Cited by 54 publications

References 49 publications

Survey on parameter optimization of mobile communication band low noise amplifier design

Survey on parameter optimization of mobile communication band low noise amplifier design

A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique

Analysis and design of a 1.7‐ to 27.1‐GHz low‐noise amplifier

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