A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator

Yan, Congliao; Wang, Shaoqian; Zhao, Sheng; Huang, Yulei; Deng, Guoliang; Wang, Sha; Zhou, Shouhuan

doi:10.1063/5.0137678

Applied Physics Letters

2023

DOI: 10.1063/5.0137678

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A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator

Congliao Yan

Shaoqian Wang

Sheng Zhao

et al.

Abstract: One hotspot of integrated optics is how to realize a highly integrated and high-gain on-chip amplification system in a thin film of lithium niobate on insulator (TFLNOI). Here, a low erbium-doped TFLNOI waveguide amplifier with shorter length is demonstrated using the photolithography-assisted oblique-reactive ion etching technique. A maximum net internal gain of 5.4 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1531.35 nm for a waveguide length of 1.5 mm and an erbium-doped… Show more

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2024

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Cited by 8 publications

References 29 publications

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Demonstration of Optical Gain at 1535 nm Based on Er^III Complex‐Doped Polymer Waveguides Under Light‐Emitting Diode Excitation

He,

Man,

Shi

et al. 2024

Advanced Optical Materials

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A near‐infrared luminescent complex Er(DBTTA)3(DBFDPO) [where DBTTA = dibenzotetrathienoacene; DBFDPO = 4,6‐bis (diphenylphosphoryl) dibenzofuran] is synthesized. Based on the intramolecular energy transfer between organic ligands and Er3+ ions, optical gains at 1535 nm are demonstrated in Er(DBTTA)3(DBFDPO)‐doped polymer waveguides under the excitation of light‐emitting diodes (LEDs) instead of laser pumping. Relative gains of 6.4, 8.2, and 10.6 dB are obtained in 1 cm long waveguides with cross‐sectional dimensions of 6 × 4, 4 × 4, and 2 × 3 µm2 respectively, using the vertical top‐pumping mode of a 365 nm LED with 462 mW. Incorporating an ≈100 nm thick aluminum reflector grown under the lower cladding, enhanced the optical gain to 11.6 dB cm−1 in a waveguide with a cross‐section of 4 × 4 µm2, and an internal gain of ≈7.4 dB cm−1 is achieved. By relying on the intramolecular energy transfer and LED top‐pumping technology, the upconversion luminescence of Er3+ ions and thermal damage to polymer waveguides caused by the high power density of laser pumping can be effectively reduced. The complex Er(DBTTA)3(DBFDPO)‐doped polymer can be spin‐coated on different types of waveguides to compensate for optical losses at 1.5 µm and is expected to have a critical role in planar photonic integration.

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Demonstration of Optical Gain at 1535 nm Based on Er^III Complex‐Doped Polymer Waveguides Under Light‐Emitting Diode Excitation

He,

Man,

Shi

et al. 2024

Advanced Optical Materials

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Optical Amplification at 1.5 µm in Er^III Coordination Polymer‐Doped Waveguides Based on Intramolecular Energy Transfer

Shi,

Man,

et al. 2024

Advanced Science

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Abstract9,9‐bis (diphenylphosphorylphenyl) fluorene (FDPO) and dibenzotetrathienoacene (DBTTA), are synthesized as the neutral and anionic ligands, respectively, to prepare the ErIII coordination polymer [Er(DBTTA)3(FDPO)]n. Based on the intramolecular energy transfer, optical gains at 1.5 µm are demonstrated in [Er(DBTTA)3(FDPO)]n‐doped polymer waveguides under excitations of low‐power light‐emitting diodes (LEDs) instead of laser pumping. A ligand‐sensitization scheme between organic ligands and Er3+ ions under an excitation of an ultraviolet (UV) LED is established. Relative gains of 10.5 and 8.5 dB cm−1 are achieved at 1.53 and 1.55 µm, respectively, on a 1‐cm‐long SU‐8 channel waveguide with a cross‐section of 2 × 3 µm2 and a 1.5‐µm‐thick [Er(DBTTA)3(FDPO)]n‐doped polymethylmethacrylate (PMMA) as upper cladding. The ErIII coordination polymer [Er(DBTTA)3(FDPO)]n can be conveniently integrated with various low‐loss inorganic waveguides to compensate for optical losses in the C‐band window. Moreover, by relying on the intramolecular energy transfer and UV LED top‐pumping technology, it is easy to achieve coupling packaging of erbium‐doped waveguide amplifiers (EDWAs) with pump sources in planar photonic integrated chips, effectively reducing the commercial costs.

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Gain Dynamics in Integrated Waveguide Amplifier Based on Erbium-Doped Thin-Film Lithium Niobate

Cai,

Li,

Zhang

et al. 2024

ACS Photonics

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Erbium-doped thin-film lithium niobate (Er:TFLN) provides efficient solutions for monolithic integrated waveguide amplifiers and lasers, as well as the potential for electro-optic modulation and nonlinear application. However, the gain and saturation absorption characteristics usually lack dynamic analysis, which is highly valuable for various gain devices. We provide a practical framework for correlating the erbium absorption and signal wavelength/power in the erbium-doped waveguide amplifier (EDWA) on the Er:TFLN platform, demonstrating the gain performance of single-wavelength or multiwavelength signal amplification. The 10 cm long Er:TFLN EDWA achieves 62.76 dB signal enhancement at 1531 nm, with 22.26 dB internal net gain at the small signal region. Additionally, a significant on-chip output power of 16.65 dBm with 7.65 dB internal net gain is realized at 1550 nm. Furthermore, theoretical models and experimental results have been conducted on signal saturation power, output power, and noise figure. In multiwavelength signal amplification experiments, approximately 20 dB internal net gain and a noise figure of 4.36 dB are achieved for an electro-optic frequency comb with a 10 GHz repetition rate. Moreover, an internal net gain exceeding 20 dB is achieved across 45% of C-band broadband signals, establishing a solid foundation for relay amplification applications in highcapacity and multichannel data transmission systems. The gain dynamics proposed in this work can be effectively applied to design optimal EDWAs and lasers to construct monolithic integrated lithium niobate systems.

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A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator

Cited by 8 publications

References 29 publications

Demonstration of Optical Gain at 1535 nm Based on Er^III Complex‐Doped Polymer Waveguides Under Light‐Emitting Diode Excitation

Demonstration of Optical Gain at 1535 nm Based on Er^III Complex‐Doped Polymer Waveguides Under Light‐Emitting Diode Excitation

Optical Amplification at 1.5 µm in Er^III Coordination Polymer‐Doped Waveguides Based on Intramolecular Energy Transfer

Gain Dynamics in Integrated Waveguide Amplifier Based on Erbium-Doped Thin-Film Lithium Niobate

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A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator

Cited by 8 publications

References 29 publications

Demonstration of Optical Gain at 1535 nm Based on ErIII Complex‐Doped Polymer Waveguides Under Light‐Emitting Diode Excitation

Demonstration of Optical Gain at 1535 nm Based on ErIII Complex‐Doped Polymer Waveguides Under Light‐Emitting Diode Excitation

Optical Amplification at 1.5 µm in ErIII Coordination Polymer‐Doped Waveguides Based on Intramolecular Energy Transfer

Gain Dynamics in Integrated Waveguide Amplifier Based on Erbium-Doped Thin-Film Lithium Niobate

Contact Info

Product

Resources

About

Demonstration of Optical Gain at 1535 nm Based on Er^III Complex‐Doped Polymer Waveguides Under Light‐Emitting Diode Excitation

Demonstration of Optical Gain at 1535 nm Based on Er^III Complex‐Doped Polymer Waveguides Under Light‐Emitting Diode Excitation

Optical Amplification at 1.5 µm in Er^III Coordination Polymer‐Doped Waveguides Based on Intramolecular Energy Transfer