a-Si:H Thin Films Deposited at Low Temperature by Sputtering

Abstract

a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plasma concentration were used as well as two power and two total pressure conditions. The film characterization, by RBS and FTIR, enabled the identification and quantization of the incorporated species in the film. The hydrogen content found was related with the dark conductivity and optical absorption for the determination of the best deposition conditions for thin film transistor fabrication.