2007 IEEE International Symposium on Circuits and Systems (ISCAS) 2007
DOI: 10.1109/iscas.2007.378083
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A SiGe BiCMOS Variable Gain Amplifier for Cryogenic Temperature Applications

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Cited by 3 publications
(1 citation statement)
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“…Many CMOS amplifiers for cryogenic temperatures, with different technologies were proposed for this purpose [8][9][10][11][12][13]. The most recent works are focused on the Si-Ge technology since it shows good response at cryogenic temperatures [12,14]. The last proposed design uses an amplifier on the 4 K stage directly on the chip package [15].…”
Section: Introductionmentioning
confidence: 99%
“…Many CMOS amplifiers for cryogenic temperatures, with different technologies were proposed for this purpose [8][9][10][11][12][13]. The most recent works are focused on the Si-Ge technology since it shows good response at cryogenic temperatures [12,14]. The last proposed design uses an amplifier on the 4 K stage directly on the chip package [15].…”
Section: Introductionmentioning
confidence: 99%