2014
DOI: 10.1016/j.mejo.2014.04.002
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A SiGe HBT low noise amplifier using on-chip notch filter for K band wireless communication

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Cited by 2 publications
(1 citation statement)
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“…For [6] K-band, an LNA with 180nm CMOS is created, and to lower the NF, the LNA has three stages of common sources. Apart from CMOS implementation, LNA are also designed using other advanced technologies such as pHEMT, GaAs, BiCMOS, etc.In [7] giving the SiGe HBT based design of an LNA. To improve the input matching and boost gain, a capacitor has been added to the base-collector notch filter.…”
mentioning
confidence: 99%
“…For [6] K-band, an LNA with 180nm CMOS is created, and to lower the NF, the LNA has three stages of common sources. Apart from CMOS implementation, LNA are also designed using other advanced technologies such as pHEMT, GaAs, BiCMOS, etc.In [7] giving the SiGe HBT based design of an LNA. To improve the input matching and boost gain, a capacitor has been added to the base-collector notch filter.…”
mentioning
confidence: 99%