A SiGe on insulator MOSFET to improve the electrical performances: Amended channel band energy

Orouji, Ali A.; Mohtasham, Alireza; Jam, Moein Eslami

doi:10.1016/j.mssp.2015.07.002

Cited by 3 publications

(3 citation statements)

References 17 publications

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“…The electron mobility of Si in sub-nanometer devices is moderate while the hole mobility is very poor which restricts the use of Si for both nMOS and pMOS devices in CMOS [6]. This has triggered meticulous investigation of novel materials such as germanium (Ge) [7,8] and silicon-germanium (SiGe) [9,10] and it has been demonstrated that Ge and SiGe exhibit high hole and high electron mobility respectively. Therefore, in order to improve the performance of CMOS based circuits, devices with high mobility materials have been considered [11].…”

Section: Introductionmentioning

confidence: 99%

“…A novel concept of hybrid CMOS (HCMOS) has been proposed by many researchers which consists of a pMOS and an nMOS with different channel materials such as Ge and Si respectively [12][13][14]. However, many theoretical and experimental studies have reported that SiGe exhibits higher electron mobility than Si and hence, can behave as a substitute for n-type Si devices in HCMOS [9]. Due to this, SiGe has gained a tremendous popularity in recent years and a thorough research has been accelerated on the simulation and modeling of SiGe devices [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

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Device and circuit level analysis of negative capacitance hybrid CMOS: a prospect for low power/low voltage applications

Bansal¹,

Kaur²

2019

Semicond. Sci. Technol.

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In this work, a concept of negative capacitance hybrid CMOS (NCHCMOS) is presented which consists of p-NCGeOIFET (NC germanium-on-insulator FET) and n-NCSiGeOIFET (NC SiGeon-insulator FET). Both devices have been simulated by using respective calibrated TCAD models with Landau-Khalatnikov equation. The enhanced performance of both devices due to NC effect has been shown in terms of improved barrier and subsequently reduced leakage current (by 2 orders). The max gain of Ge and SiGe NCFETs has been found to be 1.64 and 1.56 (i.e.>1) respectively which is manifested in reduced subthreshold swing values. Results have also shown that the NC of ferroelectric material attributes to very high gate capacitance which is further responsible for enormous increase in on-state current (170% in p-NCGeOIFET and 103% in n-NCSiGeOIFET). Further, to investigate the performance of these devices in low power/low voltage applications, static and transient characteristics of NCHCMOS based gates and circuit have been obtained. It has been shown that NCHCMOS gives improved circuit performance in terms of high noise margin, reduced rise and fall time, less propagation delay, and reduced power and energy dissipation as compared to HCMOS. It is also displayed that NCHCMOS exhibits very less values (approximately by an order or 2) of energy-delay-product in respect to HCMOS and provides energy efficient operation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Device and circuit level analysis of negative capacitance hybrid CMOS: a prospect for low power/low voltage applications

Bansal¹,

Kaur²

2019

Semicond. Sci. Technol.

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“…Further, it has been proposed that the degradation in the characteristics of SiGe devices due to reduced bandgap can be minimized by incorporating 'On-Insulator' structure which provides excellent electrostatic control [12,13]. Many experimental research works have been reported on different techniques of fabrication of Si 1-z Ge z -On-Insulator (SGOI) substrates to exploit the advantages of Si 1-z Ge z along with On-Insulator structure [14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

An analytical subthreshold current model for ferroelectric SiGe-on-insulator field effect transistor (FSGOIFET)

Bansal¹,

Kaur²

2018

Semicond. Sci. Technol.

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In this paper, a novel device concept has been presented which integrates ferroelectric gate insulator on SiGe-On-insulator (SGOI) substrate. An analytical subthreshold current model for ferroelectric SGOI field effect transistor (FSGOIFET) has been developed by using 2D Poisson's equation and Landau-Khalatnikov equation. The explicit expressions for threshold voltage and subthreshold current have been obtained by extending the electrostatic potential model. The other important device parameters such as drain induced barrier lowering, threshold voltage rolloff, subthreshold swing etc have been obtained to quantitatively study the performance of FSGOIFET at shorter channel length. The merits of ferroelectric gate insulator have been demonstrated by comparing all device characteristics of FSGOIFET with those obtained for SGOIFET. An excellent fit of analytical results with simulation results obtained from Silvaco ATLAS TCAD has corroborated the accuracy of the presented model.

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Circuit Analysis of Pass Transistors and Inverter based on Negative Capacitance Silicon-Germanium Double Gate FET (NCSiGeDGFET)

Bansal

Kaur

2019

2019 Global Conference for Advancement in Technology (GCAT)

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A SiGe on insulator MOSFET to improve the electrical performances: Amended channel band energy

Cited by 3 publications

References 17 publications

Device and circuit level analysis of negative capacitance hybrid CMOS: a prospect for low power/low voltage applications

Device and circuit level analysis of negative capacitance hybrid CMOS: a prospect for low power/low voltage applications

An analytical subthreshold current model for ferroelectric SiGe-on-insulator field effect transistor (FSGOIFET)

Circuit Analysis of Pass Transistors and Inverter based on Negative Capacitance Silicon-Germanium Double Gate FET (NCSiGeDGFET)

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