Abstract:Errors in measurement of temperature have a significant negative impact on the thermal conductivity measurement. This paper analyses the causes of temperature error and why a small temperature error could often cause a huge error in thermal conductivity instrument. Since traditional methods often involve complex circuits or formulas, here we introduce a convenient and efficient method to improve temperature measurement accuracy, which by effectively combination of the table consulting and a new simple interpol… Show more
“…The process uses two separate implant steps. This technique of smoothing the equipotential contours at the edges of the devices results in a manageable surface electric field and prevents the device from breaking down prematurely [29,30]. In the p-n diode process, 0.5 μm p-type layers are doped with Mg, at 2×10 19 cm −3 , and a higher-doped layer at the surface for reduced contact resistance.…”
Section: Device Fabrication and Processingmentioning
Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures View the table of contents for this issue, or go to the journal homepage for more 2015 Semicond. Sci. Technol. 30 124001
“…The process uses two separate implant steps. This technique of smoothing the equipotential contours at the edges of the devices results in a manageable surface electric field and prevents the device from breaking down prematurely [29,30]. In the p-n diode process, 0.5 μm p-type layers are doped with Mg, at 2×10 19 cm −3 , and a higher-doped layer at the surface for reduced contact resistance.…”
Section: Device Fabrication and Processingmentioning
Characterization of vertical GaN p-n diodes and junction field-effect transistors on bulk GaN down to cryogenic temperatures View the table of contents for this issue, or go to the journal homepage for more 2015 Semicond. Sci. Technol. 30 124001
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