A simple compact model for long-channel junctionless Double Gate MOSFETs

Analytical surface potential modeling and simulation of junction-less double gate (JLDG) MOSFET for ultra low-power analog/RF circuits

“…where x is the coordinate between drain and source regions ð0 o x o LÞ, y is coordinates between the two gatesð0 o y ot si Þ,ϕis the electric potential, ε si is the permittivity of silicon, q is the electronic charge,N D is the doping concentration, V QF is the quasi Fermi potential and V t ¼ kT=q is the thermal voltage [30]. To obtain the analytical solution for Eq.…”

A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics

“…The goal is to develop a core model using the same charge based formulation presented in [5] and [16] for the GAA MOS device presented in Fig. 1.…”

“…Several models were already presented for double gate MOSFETs (DGMOS) [5]- [10], FinFETs, and cylindrical gate-all-around (GAA) [11]- [15]. The cylindrical GAA case is the ideal one and is sometimes closer to the real device as the fabrication process tends to round up the corners of square FinFETs.…”

Drain current model for short-channel triple gate junctionless nanowire transistors

“…1.a) [18][19][20][21] and a few for 3G JNTs [22,23]. The most part of JNT models in literature considers two expressions for the drain current and the transition between depletion and accumulation regimes is taken by using smoothing functions.…”