2020
DOI: 10.1002/er.5736
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A simple flame strategy for constructing W‐doped BiVO 4 photoanodes with enhanced photoelectrochemical water splitting

Abstract: Summary Bismuth vanadate (BiVO4) with narrow band gap has been widely reported in photoelectrochemical (PEC) water splitting. However, the low kinetic of water splitting is still the key for limiting the PEC performance of BiVO4. Herein, a W‐doped BiVO4 (W‐BVO) photoanode has been controllably prepared by a fast flame method within 40 seconds. The preparation condition including calcination time and quantity of W precursor has been systemically investigated, in order to optimize the PEC performance of W‐BVO. X… Show more

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Cited by 11 publications
(8 citation statements)
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“…In general, W- or Zr-doping caused rather minor changes in the particle sizes and SSA, see Table 1 . In doped-materials, diffraction peaks from secondary phases such as BiWO 4 at 2θ = 17.2° were detected [ 9 ]. Apart from this, W-doping had no effect on the BiVO 4 peak positions, neither BiVO 4 phase-change, i.e., from monoclinic to tetragonal.…”
Section: Resultsmentioning
confidence: 99%
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“…In general, W- or Zr-doping caused rather minor changes in the particle sizes and SSA, see Table 1 . In doped-materials, diffraction peaks from secondary phases such as BiWO 4 at 2θ = 17.2° were detected [ 9 ]. Apart from this, W-doping had no effect on the BiVO 4 peak positions, neither BiVO 4 phase-change, i.e., from monoclinic to tetragonal.…”
Section: Resultsmentioning
confidence: 99%
“…So far, there is credible evidence that doping of BiVO 4 can be an efficient strategy to improve the photocatalytic performance [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. Highly encouraging results show that appropriate doping of BiVO 4 , i.e., with Mo [ 7 ], W [ 8 , 9 ], P [ 10 ], B [ 11 ] or Ce [ 12 ] can result in significant enhancement of O 2 -evolution. Currently, all reported methods for synthesis of doped BiVO 4 photocatalysts, concern liquid-chemistry methods.…”
Section: Introductionmentioning
confidence: 99%
“…14 From recent research, W doped BiVO 4 achieved a fast charge transfer with a low charge transfer resistance, which unfortunately demonstrated only electron conversion efficiency of 5.79% under 1.23 V and light wavelength 340 nm irradiation. 15 On the other hands, seven layers of silicon back-buried junction-based water splitting achieved the conversion efficiency15.62%, 16 which not only gets the potential for furthering raising the performance when the interface resistance can be reduced and the charge mobility can be raised but also over the industrial requirement about 10%. 17 Since the charge transfer and mobility are the issues for raising water splitting efficiency of a devices, [14][15][16] spintronic [18][19][20] demonstrate the promising characteristic for raising the energy conversion efficiency since the spintronic current flows through a material instead of accumulation.…”
Section: Introductionmentioning
confidence: 99%
“…15 On the other hands, seven layers of silicon back-buried junction-based water splitting achieved the conversion efficiency15.62%, 16 which not only gets the potential for furthering raising the performance when the interface resistance can be reduced and the charge mobility can be raised but also over the industrial requirement about 10%. 17 Since the charge transfer and mobility are the issues for raising water splitting efficiency of a devices, [14][15][16] spintronic [18][19][20] demonstrate the promising characteristic for raising the energy conversion efficiency since the spintronic current flows through a material instead of accumulation. 21 The magnetic moment 22 is currently the easiest mechanism to generate spintronic, which is widely applying in various spintronic devices.…”
Section: Introductionmentioning
confidence: 99%
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