A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics

Galloway, K.F.; Gaitan, Michael; Russell, Thomas J.

doi:10.1109/tns.1984.4333537

Cited by 151 publications

(31 citation statements)

References 17 publications

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“…Another method is based on a previous investigation of Galloway et al 11) In this method, it is assumed that the reduction of charge mobility is entirely due to interface traps. This is because the interface of Si/SiO 2 is close to the substrate where a channel of electrical current is formed, whereas the oxide traps are relatively more distant from the substrate compared with the interface traps.…”

Section: Discussionmentioning

confidence: 99%

“…On the other hand, understanding the effects of these two different types of charge densities under the condition of varying temperatures requires extended measurements of the RADFET, such as the magnitudes of I SD at the midgap voltage or the slope of I SD with respect to V GS . [9][10][11] In this paper, a brief description of space instrumentation capable of measuring various values of RADFET in the I SD -V GS plane is provided.…”

Section: Introductionmentioning

confidence: 99%

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A Small Space Radiation Monitor Capable of Measuring Multiple I_SD-V_GSValues of MOSFET

Seon

Kim²,

SUNG³

et al. 2010

Journal of Nuclear Science and Technology

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A small space radiation monitor capable of taking measurements of gate voltages of MOSFET for various drain currents has been developed for flight experiments aboard satellites. Measuring multiple I SD -V GS values of MOSFET is expected to provide better understanding of the electronic response to ionizing radiation in space. In particular, separating the effects of oxide charge densities, interface charge densities, and temperatures is anticipated for the accurate determination of total ionizing dose. Description of the instrumentation for space-borne measurements is given, along with a summary of the anticipated results from this experiment.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Small Space Radiation Monitor Capable of Measuring Multiple I_SD-V_GSValues of MOSFET

Seon

Kim²,

SUNG³

et al. 2010

Journal of Nuclear Science and Technology

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“…By this amount the gate voltage required for the formation of a channel is increased (according to www.intechopen.com absolute value), which means that the influence of interface traps on threshold voltage is it ox qN C . In order to give consideration to the influence of charge in the oxide and of interface traps on mobility, several models may be used [99][100][101] which are based on the empirical expression for the dependence of effective mobility on charge in the oxide and the concentration of admixtures in the channel of NMOS transistors given in the paper [102] …”

Section: Influence Of Charges In the Oxide And Interface Traps On Mosmentioning

confidence: 99%

Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors

Pejović¹,

Osmokrović²,

Pejovic³

et al. 2012

Current Topics in Ionizing Radiation Research

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“…Another approach to determining the radiation-induced oxide and interface charges was described by Galloway et al 4 This paper4 makes assumptions as to the effects of the radiation-induced charge on channel mobility and channel charge and uses these assumptions with the gradual channel approximation. Expressions are derived which relate the radiation-induced interface charge to changes in device transconductance, while changes in both interface and oxide charge are related to threshold voltage shifts.…”

Section: Winokur Et Alp Also Present a Technique For Separating Mos-mentioning

confidence: 99%

Charge-Sheet Model Fitting to Extract Radiation-Induced Oxide and Interface Charge

Galloway

Wilson

Witte

1985

IEEE Trans. Nucl. Sci.

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A method for extracting values of oxide and interface charge from the current-voltage (I-V) characteristics of long-channel MOSFETs is described. The one-dimensional charge-sheet model developed by Brews provides the basis for the I-V characteristics. The I-V characteristics given by this model are optimized with respect to a set of experimental data for an irradiated devrice with the flatband voltage and the mobility the only free parameters. Simple relationships between these parameters and the radiation-induced interface and oxide charge are assumed. perimental I-V data. The fitting parameters are the transistor fiatband voltage and the inversion layer mobility. Section 2 discusses the physical assumptions made in this paper and the link between the fitting parameters and the oxide and interface charge. Section 3 briefly reviews the charge-sheet model developed by Brews.5 Sections 4 and 5 present an application of this method and a comparison of the results to two other methods for extracting oxide and interface charge information from MOSFET I-V characteristics.4'6 2. Physical Assumptions The current-voltage characteristics of a long-channel MOS-FET can be accurately simulated from subthreshold to saturation using the one-dimensional charge-sheet model presented by Brews.5 Accurate input data (e.g., gate length and width, channel doping, oxide thickness, junction lateral diffusion) are required.7 For an irradiated MOSFET in which the electrical properties of the Si-SiO2 interface are altered, the assumption is made that physical parameters of the device such as channel length, oxide thickness, and channel doping are unaffected by radiation exposure and more importantly that these parameters can be measured independently. Using the one-dimensional charge sheet model as a basis for the I-V characteristics of the device, it is possible to vary flatband voltage and mobility to optimize the agreement between the predicted I-V curves and experimental data. This provides a systematic method for obtaining these parameters from the device I-V curves. If simple relationships between the radiation-induced oxide and interface charge and the observed changes in flatband voltage and channel mobility can be assumed, the radiationinduced oxide and interface charge can be extracted from the experimental I-V data.Data presented by Schwank et al.8 show the effects of ionizing radiation and subsequent annealing on threshold voltage and on mobility. These data indicate that the threshold voltage shift due to interface states and the mobility do not recover under annealing at 125°C, whereas the threshold shift due to oxide trapped charge shows considerable recovery. These results infer a relationship between the increase of charge in interface traps due to radiation and the mobility degradation due to radiation. More recent data by Sexton and Schwank9 provide evidence that the change in effective mobility due to a radiation-induced increase in interface traps, 6Nit, can be parameterized as:(1) 1 + a6NitIn this expression,...

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A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics

Cited by 151 publications

References 17 publications

A Small Space Radiation Monitor Capable of Measuring Multiple I_SD-V_GSValues of MOSFET

A Small Space Radiation Monitor Capable of Measuring Multiple I_SD-V_GSValues of MOSFET

Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors

Charge-Sheet Model Fitting to Extract Radiation-Induced Oxide and Interface Charge

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A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics

Cited by 151 publications

References 17 publications

A Small Space Radiation Monitor Capable of Measuring Multiple ISD-VGSValues of MOSFET

A Small Space Radiation Monitor Capable of Measuring Multiple ISD-VGSValues of MOSFET

Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors

Charge-Sheet Model Fitting to Extract Radiation-Induced Oxide and Interface Charge

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Product

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A Small Space Radiation Monitor Capable of Measuring Multiple I_SD-V_GSValues of MOSFET

A Small Space Radiation Monitor Capable of Measuring Multiple I_SD-V_GSValues of MOSFET