A Simple theoretical model for 63Ni betavoltaic battery

Zuo, Guoping; Zhou, Ju; Guotu, Ke

doi:10.1016/j.apradiso.2013.07.026

Cited by 41 publications

(17 citation statements)

References 19 publications

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“…The barrier (p–n or Schottky) height defines the maximum converter voltage. Betavoltaic batteries has the following advantages: a high‐energy density, a long life‐time, an easy fabrication, as well as a negligible environmental effect (when a β‐emitting isotope uncontaminated with γ‐emitting isotope is used) .…”

Section: Introductionmentioning

confidence: 99%

Comparative study of different metals for Schottky barrier diamond betavoltaic power converter by EBIC technique

Тарелкин

Бормашов

Коростылев

et al. 2016

Physica Status Solidi (a)

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In order to improve the performance of betavoltaic converters based on synthetic IIb diamond Schottky structure, we performed comparative studies of converters with Al, Hf, Pt, and Au metals forming the Schottky barrier by means of the electron beam-induced current (EBIC) method. Nearly full collection of generated electron-hole pairs was found for all fabricated structures. The aluminum contact showed the lowest energy loses due to negligible electrons absorption and backscattering. But the conversion efficiency of the Al-contact Schottky diode was just about 2% because of its low opencircuit voltage. We attributed the reduction of the Schottky barrier height to local defects observed by EBIC. The diamond cells with platinum contact showed the best performance of about 6% with a relatively high open-circuit voltage >1 V and a good incident beam multiplication factor. Thereby platinum forms the most stable and effective Schottky barrier contact for diamond betavoltaic cells.

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Section: Introductionmentioning

confidence: 99%

Comparative study of different metals for Schottky barrier diamond betavoltaic power converter by EBIC technique

Тарелкин

Бормашов

Коростылев

et al. 2016

Physica Status Solidi (a)

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“…For the design of GaN BV cells having the high PCE, the technology of simulation and modeling based on the Monte Carlo calculation was employed in researches. 13,19,20 These researches mainly tend to focus on energy absorption and EHPs generation of BV, however, some physical parameters such as doping concentration and defect traps cannot be considered. Since a depletion width and a charge collection efficiency of BV cell were related to above parameters, the simulation study for the design of BV cell had to consider it.…”

Section: Introductionmentioning

confidence: 99%

Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell

Kim

Yoon

Lee

et al. 2021

Intl J of Energy Research

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We have demonstrated the gallium nitride (GaN)-based betavoltaic (BV) cells with PN and PIN junction to investigate the relationship between the intrinsic GaN (i-GaN) layer and power performance of BV cells. A short-circuit current (I SC ) and an open-circuit voltage (V OC ) of the fabricated BV cells were evaluated by using an electron-beam (e-beam) irradiation. The cell with PIN junction exhibited an improved I SC and V OC compared to the cell with PN junction. This is because the additional 200 nm-thick i-GaN layer extends the depletion region of BV cell, resulting in improved charge collection. When a 17 kV ebeam irradiated into the fabricated GaN PIN BV cell, the device exhibited an I SC of 1.86 μA, a V OC of 2.23 V, a maximum output power (P max.out ) of 2.74 μW, and a power conversion efficiency (PCE) of 4.5%, respectively. This PCE is the best value among GaN BV cell researches using 17 keV e-beam irradiation. To study a role of i-GaN layer in PIN BV cell, the technology computer-aided design (TCAD) simulator was implemented. The effect of layer thickness and native defects in GaN material on the power performance of BV cell was evaluated. The power performance of PIN BV cell was degraded by introducing native defects in layers due to an increase of recombination rate.The BV cell with 500 nm-thick i-GaN layer exhibited better power performance when the electrons with average energy of Ni-63 irradiated into device because the maximum absorption rate of electrons was well positioned in the depletion region. The experimental and simulated results showed that the introduction of i-GaN layer and the optimization of parameters such as thickness and crystalline quality were important to improve the power performance of BV cells.

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“…Simulation and modeling technology based on the Monte Carlo calculation were employed for the design of BV cells with a high-power conversion efficiency. [13][14][15] These studies tended to focus on energy absorption and electron-hole pairs (EHPs) generation. Device design that considers a charge collection efficiency should be carried out using technology computeraided design (TCAD) simulator, which was well used for design of GaN-based semiconductor device and analysis of various physical phenomenon to propose novel BV cells.…”

Section: Introductionmentioning

confidence: 99%

“…It is necessary to perform a structural design of GaN BV cells with the wide depletion region, which plays an important role in terms of energy conversion efficiency. Simulation and modeling technology based on the Monte Carlo calculation were employed for the design of BV cells with a high‐power conversion efficiency 13‐15 . These studies tended to focus on energy absorption and electron–hole pairs (EHPs) generation.…”

Section: Introductionmentioning

confidence: 99%

Design and optimization of GaN ‐based betavoltaic cell for enhanced output power density

et al. 2020

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In this work, we designed and optimized a gallium nitride (GaN)-based betavoltaic (BV) cell using an AlGaN back-barrier layer and finger structure for improving the output power density. A short-circuit current density (J SC) and an open-circuit voltage (V OC) of the BV cells associated with an output power density were investigated by using electron-beam (e-beam) irradiation. The device with the Al 0.25 Ga 0.75 N back-barrier layer exhibited an enhanced J SC

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A Simple theoretical model for 63Ni betavoltaic battery

Cited by 41 publications

References 19 publications

Comparative study of different metals for Schottky barrier diamond betavoltaic power converter by EBIC technique

Comparative study of different metals for Schottky barrier diamond betavoltaic power converter by EBIC technique

Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell

Design and optimization of GaN ‐based betavoltaic cell for enhanced output power density

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