A simplified impact ionization model based on the average energy of hot-electron subpopulation

Tang, Ting-Wei; Nam, Joonwoo

doi:10.1109/55.678544

Cited by 5 publications

(2 citation statements)

References 6 publications

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“…The quasi-equilibrium approach (for example, the drift-diffusion model) is not able to account for these effects and the desire for accurate transport models has therefore substantially increased in recent years. The hydrodynamic models [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] can adequately account for non-stationary and hot-electron effects of carriers in submicrometre devices. Although the kinetic approach [17][18][19][20][21][22][23] can provide more detailed information on electron dynamics than can the hydrodynamic approach, the more feasible computational time required by the hydrodynamic models appears to be more practical and attractive to semiconductor device industries.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, the inconsistent assumptions, associated with the effective mass, electron temperature and heat flux, for closure of the conventional hydrodynamic model with non-parabolic band structure have recently been discussed [16]. Some authors [9,16] have indicated the inaccuracy of the Fourier-law heat flux and others [5,6] have included the third-order moment (energy flux) equation to avoid dealing with the heat flux.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Four-moment hydrodynamic modelling of a submicrometre semiconductor device in a non-parabolic band structure

Guo¹,

Cheng²,

Luo³

et al. 1998

J. Phys. D: Appl. Phys.

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Two hydrodynamic models for a non-parabolic band structure are proposed in order to obtain closed sets of the first four moment equations derived from the Boltzmann transport equation. Instead of using the Fourier-law heat flux to determine the energy flux and to close the first three moment equations as applied to the conventional hydrodynamic model, the energy flux is solved directly from the third-order moment equation. The physical quantities introduced in the third-order moment equation are expressed in terms of the lower-order moments and the average parameters associated with the random velocity. To close the third-order moment equation, the average parameters related to the random velocity are assumed to be energy dependent. Transport results for a submicrometre silicon -n- diode obtained from the proposed four-moment hydrodynamic models, compared with those from Monte Carlo simulations and from three-moment hydrodynamic models, are studied in detail.

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