A SIMS study on Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures grown by metal organic chemical vapor deposition

Yang, Limin; Zhao, Qingxiang; Xing, Guozhong; Wang, D.D.; Wu, Tom; Willander, Magnus; Ivanov, Ivan Gueorguiev; Yang, Jianqiu

doi:10.1016/j.apsusc.2011.05.038

Cited by 13 publications

(5 citation statements)

References 23 publications

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“…In all these applications it is a primary requirement that the heterointerface between MgZnO and ZnO layers be of high quality to obtain higher carrier mobility, narrow and stronger excitonic transitions lines and to enhance the overall device performance. Generally high growth temperatures in the range of ~ 600 to 800 0 C are used for the growth of good quality MgZnO thin films by different deposition methods [1,4,5]. Moreover the solubility limit of MgO in MgO-ZnO binary system is reported to be ~ 4 mol% under thermal equilibrium condition [6].…”

Section: Introductionmentioning

confidence: 99%

Effect of Mg diffusion on photoluminescence spectra of MgZnO/ZnO bi-layers annealed at different temperatures

Das

Misra

Ajimsha

et al. 2013

Journal of Applied Physics

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Abstract:Mg 0.29 Zn 0.71 O/ZnO (MZO/ZnO) bilayers were grown on sapphire substrates by pulsed laser deposition at ~ 400 0 C and were subsequently annealed at different temperatures ranging from ~ 500 to 900 0 C to allow diffusion of Mg across the interface. The diffusion of Mg was confirmed from secondary ion mass spectroscopy (SIMS) and Photo-absorption measurements on the samples. As a result of Mg diffusion the photoluminescence (PL) spectra of the bilayers got significantly modified. Whereas the as grown structure had two distinct near band edge UV luminescence peaks corresponding to the ZnO and MZO layer, the one annealed at ~ 900 0 C had a single near band edge PL peak corresponding to a complete intermixed layer. At the intermediate annealing temperature of ~800 0 C the PL peak position corresponding to the MZO layer red-shifted while that corresponding to the ZnO layer blue-shifted, implying a diffused interface and partial intermixing. A theoretical model has been developed and numerically simulated to correlate the PL spectra of the bilayers with the Mg diffusion profile across the interface, as measured by SIMS.

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Section: Introductionmentioning

confidence: 99%

Effect of Mg diffusion on photoluminescence spectra of MgZnO/ZnO bi-layers annealed at different temperatures

Das

Misra

Ajimsha

et al. 2013

Journal of Applied Physics

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“…In addition, ZnMgO epilayers with the same Mg concentration, but grown at different temperatures, have different built-in strain, with a smaller built-in strain for structures grown at higher temperatures due to strong Mg-diffusion into the buffer ZnO layer. 30 In order to get an idea of both the built-in strain and the Mg-concentration effects, we have investigated two sets of ZnMgO epilayer samples. For one set, the Mg-concentration was changed, while the growth temperature was kept constant.…”

Section: Resultsmentioning

confidence: 99%

Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition

Zhao¹,

Liu²,

Holtz³

2014

Journal of Applied Physics

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Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition J. Vac. Sci. Technol. A 29, 03A106 (2011) The grown samples were investigated by x-ray photoelectron spectroscopy and photoluminescence. The magnesium (Mg) concentration was varied between 0% and 3% in order to study the properties of shallow donors. The free and donor bound excitons could be observed simultaneously in our high quality Zn 1Àx Mg x O epilayers in the photoluminescence spectra. The results indicate that both built-in strain and Mg-concentration influence the donor exciton binding energy. It clearly shows that the donor exciton binding energy decreases with increasing Mg-concentration and with increasing built-in strain. Furthermore, the results indicate that the donor bound exciton transition energy increases with decreasing strength of the built-in strain if the Mg-concentration is kept the same in the Zn 1Àx Mg x O epilayers. V C 2014 AIP Publishing LLC.

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“…The wide band gap II-VI semiconductor alloy, ZnMgO, has received a lot of attentions for possible applications in ZnO-based optoelectronic devices [1][2][3][4]. The increase of its band gap energy with Mg concentration has already been confirmed.…”

Section: Introductionmentioning

confidence: 99%

Mg-Induced Shift of Band Edge in ZnO:Mg Probed by the Visible Luminescence

Guo

2012

AMR

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Mg-doped ZnO was synthesized using a co-precipitation technique. X-ray diffraction (XRD) measurements and absorption spectra show that Mg ions are doped into the lattice positions of ZnO. In the room temperature photoluminescence (PL) spectra, two emission bands, ultraviolet (UV) and visible, were observed. Either of two emissions shows a blue-shift. The visible emission band is composed of the green emission and the blue emission. The amount of blue-shift in green emission is 0.03 eV, about half of the amount of blue-shift in blue emission. Mg substitution raises and lowers conduction- and valence-band edges, respectively.

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A SIMS study on Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures grown by metal organic chemical vapor deposition

Cited by 13 publications

References 23 publications

Effect of Mg diffusion on photoluminescence spectra of MgZnO/ZnO bi-layers annealed at different temperatures

Effect of Mg diffusion on photoluminescence spectra of MgZnO/ZnO bi-layers annealed at different temperatures

Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition

Mg-Induced Shift of Band Edge in ZnO:Mg Probed by the Visible Luminescence

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