A simulation model for cathodoluminescence in the scanning electron microscope

Phang, J.C.H.; Pey, K. L.; Chang, Dae-Sik

doi:10.1109/16.127466

“…Two definitions of surface are used in the literature: the surface defined as a dead-layer thickness Z T (non-radiative region) with a surface recombination velocity V s [6][7][8]; and that defined as a depletion region with a defect density N t and an energy level E t in the band gap. The second definition of surface is used in cases of dislocation [12] and grain boundary [13].…”

Section: Surface Recombinationmentioning

confidence: 99%

“…Hence, the CL intensity is given by where a b is the absorption coefficient of the material, which depends on the wavelength l [2]. In the past, theoretical methods to simulate CL signals have been proposed [6][7][8]. In these models, the CL signal comes from a semi-infinite semiconductor with a non-radiative layer at the surface, which is called a dead layer and is characterised by a thickness Z T .…”

Section: Signalmentioning

confidence: 99%

“…(4)). Different generation functions have been used, in particular the modified Gaussian approximation [6] and the Monte Carlo method [7]. Hergert et al [6] studied CL emission using the theoretical expression for a CL signal derived in Refs.…”

Section: Signalmentioning

confidence: 99%

“…This, however, requires a better description of the electron-semiconductor interaction and of the defect and a good formulation of the detected CL signal. The electron-semiconductor interaction is described by point or spherical source models, or by a modified Gaussian approximation [4][5][6] and the Monte Carlo method [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

Djemel

¹

,

Nouiri

²

,

Kouissa

³

et al. 2002

phys. stat. sol. (a)

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The cathodoluminescence (CL) technique is frequently used to study semiconductor materials. The quantitative determination of material parameters requires an accurate simulation of the CL signal as a function of electron beam parameters (i.e. intensity I p , energy E 0 ). The free surface of a semiconductor can be described by a defect density N t , which induces localised electron states E t in the band gap. The surface is generally charged, which induces a band bending near the surface. Hence, a potential barrier E b is formed across a space-charge region. The electric field E in this region causes the carriers to drift towards the surface and enhances their recombination. This latter is treated using the Shockley-Read-Hall theory. This paper deals with the case of n-GaAs, particularly the comparison between the numerical results of the model and experimental data obtained from the literature. A connection between the movement of the energy levels E t considered in this model and the surface recombination velocity V s is established.

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“…Many theories have been developed to describe the electron-matter interaction, such as those based on point or spherical source models, modified Gaussian approximation, 2 -4 and the MC method. 5 In the point source model the totality of electron-hole pairs is concentrated at a point, which is located at R e /3 from the surface (R e is the maximum depth), whereas the uniform spherical approximation assumes that the totality of electron-hole pairs is distributed inside a sphere with a radius R e . However, in the Gaussian approximation, the electron-hole pairs are distributed according to a Gaussian function.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo model of the temperature rise at a GaAs surface under an electron beam

Nouiri

¹

,

Chaguetmi

²

,

Belabed

³

2006

Surface & Interface Analysis

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Scanning electron microscopy (SEM) has frequently been used to study semiconductor materials. It offers the possibility of obtaining reliable qualitative and quantitative information on relevant local material parameters. The temperature rise due to electron-beam bombardment can influence some semiconductor parameters, which then will influence the SEM information. In this work we propose a model calculation based on the Monte Carlo (MC) method to calculate the temperature rise due to electron-beam heating. The results show that the temperature rise increases with increasing numbers of electrons (electron-beam current), and the inverse behavior is observed with respect to the electron energy (electron-beam voltage). The decrease in temperature rise with depth is also obtained.

show abstract

Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

Djemel

¹

,

Nouiri

²

,

Kouissa

³

et al. 2002

phys. stat. sol. (a)

View full text Add to dashboard Cite

The cathodoluminescence (CL) technique is frequently used to study semiconductor materials. The quantitative determination of material parameters requires an accurate simulation of the CL signal as a function of electron beam parameters (i.e. intensity I p , energy E 0 ). The free surface of a semiconductor can be described by a defect density N t , which induces localised electron states E t in the band gap. The surface is generally charged, which induces a band bending near the surface. Hence, a potential barrier E b is formed across a space-charge region. The electric field E in this region causes the carriers to drift towards the surface and enhances their recombination. This latter is treated using the Shockley-Read-Hall theory. This paper deals with the case of n-GaAs, particularly the comparison between the numerical results of the model and experimental data obtained from the literature. A connection between the movement of the energy levels E t considered in this model and the surface recombination velocity V s is established.

show abstract

A simulation model for cathodoluminescence in the scanning electron microscope

Cited by 20 publications

References 17 publications

Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

Monte Carlo model of the temperature rise at a GaAs surface under an electron beam

Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

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