A Simulation Study on Radiative Recombination Analysis in CIGS Solar Cell

Paul, Sanjoy; López, Roberto G.; Mia, Dalim; Swartz, C. H.; Li, Jian V.

doi:10.1109/pvsc.2017.8521498

Cited by 3 publications

(4 citation statements)

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“…Figure 9 shows the generated SRH and radiative recombination profiles (for T = 300 K) at V = V OC . It was found that the interface of CdS/CIGS and SCR act as recombination centers in the structure, matching the observations made by [50]. However, in this study radiative recombination rate seems to be higher at the depletion region and QNR while SRH is significantly more dominant at the front interface.…”

Section: Optimizing Bandgap Energy Of Mose 2 Layer For Compatibility ...supporting

confidence: 89%

“…The principle of temperature-and illuminationdependent V OC analysis is to identify and quantify Shockley-Read-Hall (SRH) as well as radiative recombination rates in different regions of the CIGS absorber-namely, the heterointerface, depletion region and quasi-neutral region (QNR). A study conducted by Paul et al [50] depicted that most of the recombination occurs near the CdS buffer/CIGS absorber interface and in the depletion region, with Shockley-Read-Hall (SRH) recombination dominating over radiative recombination when operating temperature, T is set at 300 K. By emulating the investigation carried out by Paul et al, simulation study on the relationship of recombination rate and the depth of the absorber layer was carried out using the baseline CIGS model at V = V OC . The MoSe 2 interface layer and absorber bandgap grading was not incorporated in this baseline CIGS model.…”

Section: Optimizing Bandgap Energy Of Mose 2 Layer For Compatibility ...mentioning

confidence: 99%

“…The MoSe 2 interface layer and absorber bandgap grading was not incorporated in this baseline CIGS model. Uniform mid-gap defect level for all layers in the structure were considered, with radiative recombination coefficient defined as 1.0 × 10 −10 cm 3 /s based on [50]. Figure 9 shows the generated SRH and radiative recombination profiles (for T = 300 K) at V = V OC .…”

Section: Optimizing Bandgap Energy Of Mose 2 Layer For Compatibility ...mentioning

confidence: 99%

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A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells

et al. 2021

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The influence of Molybdenum diselenide (MoSe2) as an interfacial layer between Cu(In,Ga)Se2 (CIGS) absorber layer and Molybdenum (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profile of the absorber layer that consist of both back grading (BG) and front grading (FG), which is defined as double grading (DG), attribution to the variation in Ga content was studied. The key focus of this study is to explore the combinatorial effects of MoSe2 contact layer and Ga grading of the absorber to suppress carrier losses due to back contact recombination and resistance that usually occur in case of standard Mo thin films. Thickness, bandgap energy, electron affinity and carrier concentration of the MoSe2 layer were all varied to determine the best configuration for incorporating into the CIGS solar cell structure. A bandgap grading profile that offers optimum functionality in the proposed configuration with additional MoSe2 layer has also been investigated. From the overall results, CIGS solar cells with thin MoSe2 layer and high acceptor doping concentration have been found to outperform the devices without MoSe2 layer, with an increase in efficiency from 20.19% to 23.30%. The introduction of bandgap grading in the front and back interfaces of the absorber layer further improves both open-circuit voltage (VOC) and short-circuit current density (JSC), most likely due to the additional quasi-electric field beneficial for carrier collection and reduced back surface and bulk recombination. A maximum power conversion efficiency (PCE) of 28.06%, fill factor (FF) of 81.89%, JSC of 39.45 mA/cm2, and VOC of 0.868 V were achieved by optimizing the properties of MoSe2 layer and bandgap grading configuration of the absorber layer. This study provides an insight into the different possibilities for designing higher efficiency CIGS solar cell structure through the manipulation of naturally formed MoSe2 layer and absorber bandgap engineering that can be experimentally replicated.

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Section: Optimizing Bandgap Energy Of Mose 2 Layer For Compatibility ...supporting

confidence: 89%

Section: Optimizing Bandgap Energy Of Mose 2 Layer For Compatibility ...mentioning

confidence: 99%

Section: Optimizing Bandgap Energy Of Mose 2 Layer For Compatibility ...mentioning

confidence: 99%

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A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells

et al. 2021

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“…Significant increases after PDT were observed for all devices. Increased minority carrier lifetime is primarily attributed to reduced nonradiative recombination because τ bulk = 7–224 ns is well below the radiative lifetime, τ R ≈ 1000 ns ( τ R = 1/(BN A ) where B = 1.67 × 10 −10 cm 3 s −1 [ 34 ] and N A values are listed in Table 2 and discussed below. The τ bulk ‐associated voltage increase can be estimated by [ 35 ]

$$\cdot V_{\text{OC} , \text{ bulk}} = \frac{k T}{q} \text{ln} \left(\right.

…”

Section: Resultsmentioning

confidence: 99%

Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se₂Solar Cells Fabricated using Different Methods

et al. 2023

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Cu(In,Ga)Se 2 (CIGS)-based thin film solar cells hold significant promise due to the tunable, direct bandgap, high absorption coefficient, thin layers, flexible and rigid substrate applications, processing options, and consistent efficiency increases. [1][2][3] Photovoltaic conversion efficiencies have reached 23.4% in small-area CIGS solar cells, [4] and significant improvements have originated from absorber composition changes and heavy alkali postdeposition treatments (PDTs). [5][6][7][8][9][10][11][12][13] The absorber energy gap and electron affinity can be controlled by the Ga/(GaþIn) (GGI) ratio, which offers two benefits. First, increases in GGI widen the absorber bandgap which raises the maximum achievable open circuit voltage (V OC ) and efficiency of the device. [14] Second, GGI grading is used to create a "notched" graded bandgap in which the bandgap is increased at both the front and rear portions of the absorber, and a bandgap minimum is maintained in the front half of the absorber. [6] The front-side bandgap increase reduces front interface hole recombination and back-side grading reduces back interface electron recombination such that V OC improvements up to 100 mV are achievable with a change in GGI %0.5. [15,16] However, voltage losses increase for GGI > 0.4 in the minimum bandgap region such that efficiency improvements are limited. [17][18][19] This can be mitigated in part through silver-alloyed ACIGS devices ((Ag,Cu)(In,Ga)Se 2 ), which

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Double Perovskite Tandem Solar Cells: Design and Performance Investigation of the Use of CABB and CCSC as Top and Bottom Cell Absorber Materials

Kumar,

Kumar

2024

J. Electron. Mater.

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A Simulation Study on Radiative Recombination Analysis in CIGS Solar Cell

Cited by 3 publications

References 18 publications

A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells

A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells

Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se₂Solar Cells Fabricated using Different Methods

Double Perovskite Tandem Solar Cells: Design and Performance Investigation of the Use of CABB and CCSC as Top and Bottom Cell Absorber Materials

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A Simulation Study on Radiative Recombination Analysis in CIGS Solar Cell

Cited by 3 publications

References 18 publications

A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells

A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells

Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se2Solar Cells Fabricated using Different Methods

Double Perovskite Tandem Solar Cells: Design and Performance Investigation of the Use of CABB and CCSC as Top and Bottom Cell Absorber Materials

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Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se₂Solar Cells Fabricated using Different Methods