A single chip electron spin resonance detector based on a single high electron mobility transistor

Matheoud, Alessandro Valentino; Sahin, Nergiz; Boero, Giovanni

doi:10.1016/j.jmr.2018.07.002

Cited by 24 publications

(22 citation statements)

References 53 publications

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“…BDPA gives an EPR signal at g = 2.003 with a linewidth of about 0.07 mT (Meyer et al, 2014). Two techniques may be used for detecting the spin response with the EPRoC, namely amplitude-sensitive detection (AM) 130 (Matheoud et al, 2018;Chu et al, 2021) and frequency-sensitive detection (FM) (Yalçin and Boero, 2008;Anders et al, 2012a). The AM and FM signals correspond to the EPR-induced changes in the VCO amplitude and frequency, respectively.…”

Section: Epr-on-a-chip Setupmentioning

confidence: 99%

Rapid Scan Electron Paramagnetic Resonance using an EPR-on-a-Chip Sensor

Künstner¹,

Chu²,

Dinse³

et al. 2021

Preprint

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Abstract. Electron paramagnetic resonance (EPR) spectroscopy is the method of choice to investigate and quantify paramagnetic species in many scientific fields, including materials science and the life sciences. Common EPR spectrometers use electromagnets and microwave (MW) resonators, limiting their application to dedicated lab environments. Here, we present an improved design of a miniaturized EPR spectrometer implemented on a silicon microchip (EPR-on-a-chip, EPRoC). In place of a microwave resonator, EPRoC uses an array of injection-locked voltage-controlled oscillators (VCOs), each incorporating a 200 µm diameter coil, as a combined microwave source and detector. The individual miniaturized VCO elements provide an excellent spin sensitivity reported to be about 4 × 109 spins/√Hz, which is extended by the array over a larger area for improved concentration sensitivity. A striking advantage of this design is the possibility to sweep the MW frequency instead of the magnetic field, which allows the use of smaller, permanent magnets instead of the bulky and power-hungry electromagnets required for field-swept EPR. Here, we report rapid scan EPR (RS-EPRoC) experiments performed by sweeping the frequency of the EPRoC VCO array. RS-EPRoC spectra demonstrate an improved SNR by approximately two orders of magnitude for similar signal acquisition times compared to continuous wave (CW-EPRoC) methods, which may improve the absolute spin and concentration sensitivity of EPR-on-a-Chip at 14 GHz to about 6 × 107 spins/√Hz and 3.6 nM/√Hz, respectively.

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Section: Epr-on-a-chip Setupmentioning

confidence: 99%

Rapid Scan Electron Paramagnetic Resonance using an EPR-on-a-Chip Sensor

Künstner¹,

Chu²,

Dinse³

et al. 2021

Preprint

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“…Since ESR detects exclusively paramagnetic species, it is ideally suited for the detec-tion of free radicals, which are related to premature cell aging (Kopani et al, 2006) and food degradation (Elias et al, 2009;Ottaviani et al, 2001), or for the detection of paramagnetic defects in semiconductor materials . To overcome the problem of limited sensitivity in conventional ESR, miniaturized detectors have been suggested, which improve the achievable spin sensitivity thanks to their larger unitary magnetic field, B u , and, in this way, room temperature spin sensitivities between 10 7 and 10 9 spins (G √ Hz) −1 at various B 0 field strengths have been reported in the literature (see Anders et al, 2012a;Twig et al, 2013;Gualco et al, 2014;Matheoud et al, 2017Matheoud et al, , 2018Dayan et al, 2018;Abhyankar et al, 2020;Zhang and Niknejad, 2021). Apart from the poor sensitivity associated with inductive ESR detectors, conventional ESR setups also suffer from a relatively large complexity.…”

Section: Introductionmentioning

confidence: 99%

On the modeling of amplitude-sensitive electron spin resonance (ESR) detection using voltage-controlled oscillator (VCO)-based ESR-on-a-chip detectors

et al. 2021

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Abstract. In this paper, we present an in-depth analysis of a voltage-controlled oscillator (VCO)-based sensing method for electron spin resonance (ESR) spectroscopy, which greatly simplifies the experimental setup compared to conventional detection schemes. In contrast to our previous oscillator-based ESR detectors, where the ESR signal was encoded in the oscillation frequency, in the amplitude-sensitive method, the ESR signal is sensed as a change of the oscillation amplitude of the VCO. Therefore, using VCO architecture with a built-in amplitude demodulation scheme, the experimental setup reduces to a single permanent magnet in combination with a few inexpensive electronic components. We present a theoretical analysis of the achievable limit of detection, which uses perturbation-theory-based VCO modeling for the signal and applies a stochastic averaging approach to obtain a closed-form expression for the noise floor. Additionally, the paper also introduces a numerical model suitable for simulating oscillator-based ESR experiments in a conventional circuit simulator environment. This model can be used to optimize sensor performance early on in the design phase. Finally, all presented models are verified against measured results from a prototype VCO operating at 14 GHz inside a 0.5 T magnetic field.

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“…Reducing the power consumption in LC oscillators is of crucial importance, e.g., for their application as single-chip electron spin resonance (ESR) spectroscopy detectors at low temperatures [36]- [41]. Exploring the behavior of microwave LC oscillators in cryogenic conditions is also interesting for studies of the phase noise of thermal and nonthermal origins [17], [42].…”

Section: Introductionmentioning

confidence: 99%

A Low-Power Microwave HEMT $LC$ Oscillator Operating Down to 1.4 K

Matheoud

Solmaz

Boero

2019

IEEE Trans. Microwave Theory Techn.

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High-electron-mobility transistors (HEMTs) based on 2-D electron gases (2DEGs) in III-V heterostructures have superior mobility compared with the transistors of silicon-based complementary metal-oxide-semiconductor technologies. The large mobility makes them attractive not only for low-noise and high-power microwave applications but also for low-power applications down to deep cryogenic temperatures. Here, we report on the design and characterization of a low-power HEMT LC Colpitts oscillator operating at 11 GHz whose minimum power consumption is 90 µW at 300 K and 4 µW at 1.4 K. The fully integrated oscillator is based on a single HEMT transistor having a gate length of 70 nm and realized using a 2DEG in In 0.7 Ga 0.3 As. The power consumption of the realized oscillator is the lowest reported in the literature so far for an LC oscillator operating in the same frequency range. In order to investigate the behavior of the oscillator, we also performed a detailed characterization of a stand-alone HEMT transistor from 1.4 to 300 K with a static magnetic field from 0 to 8 T. From the extracted values of the transistor parameters, we estimate and compare the minimum power necessary to start-up oscillations for two different Colpitts topologies.

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A single chip electron spin resonance detector based on a single high electron mobility transistor

Cited by 24 publications

References 53 publications

Rapid Scan Electron Paramagnetic Resonance using an EPR-on-a-Chip Sensor

Rapid Scan Electron Paramagnetic Resonance using an EPR-on-a-Chip Sensor

On the modeling of amplitude-sensitive electron spin resonance (ESR) detection using voltage-controlled oscillator (VCO)-based ESR-on-a-chip detectors

A Low-Power Microwave HEMT $LC$ Oscillator Operating Down to 1.4 K

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