A single-electron device and circuit simulator

Wasshuber, Christoph; Kosina, H.

doi:10.1006/spmi.1996.0138

Cited by 62 publications

(38 citation statements)

References 1 publication

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“…In the last few years, several computer codes have been developed to analyze complex single electron circuits numerically [83,84,85,53,54,86]. Two main approaches have been used.…”

Section: Numerical Analysis Of Single Electron Devices 41 Methods Anmentioning

confidence: 99%

“…Two main approaches have been used. Firstly, Monte Carlo algorithms [87,88,89,84,86], which average over various realizations of stochastic SET events. Secondly, algorithms based on a numerical solution of the master equation (18), which describes the dynamics of SET circuit in terms of time-dependent probabilities of various charge configurations [50,51,53,54,85,86,90].…”

Section: Numerical Analysis Of Single Electron Devices 41 Methods Anmentioning

confidence: 99%

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Towards Single-Electron Metrology

Flensberg

Odintsov

Liefrink

et al. 1999

Int. J. Mod. Phys. B

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We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed in the context of other standards. The operation principles of single electron transistors, turnstiles and pumps are explained and the fundamental limits of these devices are discussed in detail. We describe the various physical mechanisms that influence the device uncertainty and review the analytical and numerical methods needed to calculate the intrinsic uncertainty and to optimise the fabrication and operation parameters. Recent experimental results are evaluated and compared with theoretical predictions. Although there are discrepancies between theory and experiments, the intrinsic uncertainty is already small enough to start preparing for the first SET-based metrological applications. DFM-98-R27Towards single-electron metrology 2

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“…In the last few years, several computer codes have been developed to analyze complex single electron circuits numerically [83,84,85,53,54,86]. Two main approaches have been used.…”

Section: Numerical Analysis Of Single Electron Devices 41 Methods Anmentioning

confidence: 99%

Section: Numerical Analysis Of Single Electron Devices 41 Methods Anmentioning

confidence: 99%

Towards Single-Electron Metrology

Flensberg

Odintsov

Liefrink

et al. 1999

Int. J. Mod. Phys. B

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“…20 The Monte-Carlo simulation program is in general similar to other single-electron simulators described extensively in recent literature. [21][22][23][24][25] The duration of a specific charge state ⌬t is modeled by a stochastic Poisson process, ⌬t ϭϪlog(r)/⌫, where r ͓0:1͔ is a random number and ⌫ is the tunnel rate. This rate in turn follows from the difference of free energy between initial and final state of the system ⌬F which is calculated from the capacitance setup:…”

Section: Employed Methodsmentioning

confidence: 99%

Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays

Müller¹,

Katayama²,

Mizuta³

1998

Journal of Applied Physics

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The influence of both geometric and offset charge disorder of two-dimensional quantum dot arrays ͑also known as network tunnel junctions͒ on their Coulomb blockade voltage V b is studied using extensive Monte-Carlo simulations. A general increase of V b with increasing disorder is confirmed, but an exception to the rule is found for intermediate degrees of offset charge disorder. Detailed studies of the V b distribution reveal a stability of its minimal value against geometric disorder, whereas this figure is considerably increased for high offset charge disorder. Implications of our results for single electron device design are discussed.

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“…Monte Carlo simulation has been widely used to model SETs. SIMON [21] and MOSES [22] are the two most popular SET simulators. However, they are too slow for analysis of large circuits.…”

Section: A Past Workmentioning

confidence: 99%

Characterization of Single-Electron Tunneling Transistors for Designing Low-Power Embedded Systems

Zhu

Dick

et al. 2009

IEEE Trans. VLSI Syst.

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Abstract-Minimizing power consumption is vitally important in embedded system design; power consumption determines battery lifespan. Ultra-low-power designs may even permit embedded systems to operate without batteries by scavenging energy from the environment. Moreover, managing power dissipation is now a key factor in integrated circuit packaging and cooling. As a result, embedded system price, size, weight, and reliability are all strongly dependent on power dissipation.Recent developments in nanoscale devices open new alternatives for low-power embedded system design. Among these, single-electron tunneling transistors (SETs) hold the promise of achieving the lowest power consumption. Unfortunately, most analysis of SETs has focused on single devices instead of architectures, making it difficult to determine whether they are appropriate for low-power embedded systems.Evaluating the use of SETs in large-scale digital systems requires novel architectural and circuit design. SET-based design imposes numerous challenges resulting from low driving strength, relatively large static power consumption, and the presence of reliability problems resulting from random background charge effects. We propose a fault-tolerant, hybrid SET/CMOS, reconfigurable architecture, named IceFlex, that can be tailored to specific requirements and allows trade-offs among power consumption, performance requirements, operation temperature, fabrication cost, and reliability. Using IceFlex as a testbed, we characterize the benefits and limitations of SETs in embedded system designs. In particular, we focus on the use of SETs in room-temperature ultra-low-power embedded systems such as wireless sensor network nodes. We also consider higherperformance applications such as multimedia consumer electronics. We see this work as a first step in determining the potential of ultra-low-power embedded system design using SETs.

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A single-electron device and circuit simulator

Cited by 62 publications

References 1 publication

Towards Single-Electron Metrology

Towards Single-Electron Metrology

Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays

Characterization of Single-Electron Tunneling Transistors for Designing Low-Power Embedded Systems

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