A Single‐Phase Phosphor NaLa₉ (GeO₄)₆O₂: Tm³⁺, Dy³⁺ for Near Ultraviolet‐White LED and Field‐Emission Display

Abstract

Single‐phase white‐light‐emitting phosphors NaLa9(1−x−y) (GeO4)6O2: xTm3+, yDy3+ (NLGO: xTm3+, yDy3+) have been synthesized by a traditional solid‐state reaction method. The powder X‐ray diffraction (XRD), photoluminescence (PL), PL excitation (PLE) spectra, fluorescence decay curves, chromaticity coordinates, correlated color temperature (CCT), and the cathodoluminescence (CL) properties of the obtained phosphors are measured and discussed in detail. It is discovered that the series samples could be color‐tunable (from blue to yellow) by tuning the doping content of Dy3+ with a fixed Tm3+ content excited at 357 nm and white light (0.341, 0.324) could be obtained with the CCT of 5079 K. A NLGO: 0.01Tm3+, 0.02Dy3+ is studied carefully as representative. The main emissions of Tm3+ (453 nm, 1D2–3F4) and Dy3+ (478 nm, 4F9/2–6H15/2; 572 nm, 4F9/2–6H13/2) make it emit white light with good thermal stability (67% of the initial till 523 K). The energy transfer from Tm3+ to Dy3+ is noticed and further research has been done to explain the enhancement of Dy3+ emission and the excellent thermal stability. It also keeps stable under continuous electron bombardment with high intensity. All of these indicate that it could be a suitable candidate for white‐emitting phosphor applied for near ultraviolet‐white light‐emitting diode (NUV‐WLED) and field‐emission display (FED).

Cyan Broad-Band Emission Phosphor with Scandium Silicon Multiple-Ring Structure for White Light-Emitting Diodes and Field Emission Displays

“…As the acceleration voltage increases from 4 to 9 kV, the CL emission intensity of KBaScSi 2 O 7 rises up smoothly, and there is no sudden decrease in the intensity caused by the voltage increase. Such a phenomenon can be explained by the electron penetration depth calculated by the following empirical formula A is the relative atomic mass or molecular weight of the material, ρ is the bulk density of the phosphor, Z is the atomic number, and E is the acceleration voltage (eV) . For KBaScSi 2 O 7 :Ce 3+ phosphor, A = 389.5480, Z = 180, ρ = 3.9618 g/cm 3 , the calculated penetration depths at 4, 6, and 8 kV are 36.95, 150.81, and 409.04 nm, accordingly.…”

Люминесцентные свойства в видимом и коротковолновом ИК-спектральных диапазонах апатитов Sr-=SUB=-2-=/SUB=-La-=SUB=-8-x-=/SUB=-Tm-=SUB=-x-=/SUB=-(GeO-=SUB=-4-=/SUB=-)-=SUB=-6-=/SUB=-O-=SUB=-2-=/SUB=- (x= 0.1-1.0)

“…[11][12][13][14]. В последнее время существенное внимание научного сообщества уделено исследованиям фотолюминесцентных характеристик силикатов и германатов со структурой апатита при down-конверсии возбуждающего излучения [15][16][17][18][19][20]. Работ, затрагивающих перспективы применения данных соединений для ИК-приложений, значительно меньше.…”

“…Отдельное внимание уделено изучению концентрационных зависимостей интенсивности ИК-люминесценции, ее стабильности при повышенных температурах и определению механизма термического тушения. Более того, поскольку ион тулия традиционно используется для генерации свечения в " синей" области спектра с целью получения люминофоров белого цвета [15,16,25,26], в том числе и в соединениях со структурой апатита [19], нами были дополнительно обсуждены люминесцентный свойства германатов Sr 2 La 8 (GeO 4 ) 6 O 2 : Tm 3+ в видимом спектрально диапазоне при возбуждении ультрафиолетовым излучением.…”

Through-silicon via submount for the CuO/Cu2O nanostructured field emission display

“…[13][14][15] Field emission displays (FED) are at plane displays that have the advantages of low powerconsumption, high brightness, good color rendition, short response time, and wide operating temperature range. 16,17 In recent years, the development of integrated circuits (IC) has followed Moore's law. However, current semiconductor processing technologies face new challenges when the size of electronic components is downscaled to 10 nm and beyond.…”