A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm

Webster, Eric A. G.; Richardson, Julia M.; Grant, Lindsay A.; Renshaw, D.; Henderson, Robert K.

doi:10.1109/led.2012.2187420

Cited by 104 publications

(72 citation statements)

References 5 publications

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“…Future research activity in this area will be aimed at the development of denser arrays with larger formats (>10 6 pixels) by exploiting sub-100 nm CMOS technologies [101]. It appears likely that large CMOS SPAD arrays of the type discussed here but with improved sensitivity [102], coupled to microlens arrays [109] or designed to achieve fill factors close to 100% by alternative architectures, will play an important role in time-resolved photon-counting imaging.…”

Section: Discussionmentioning

confidence: 99%

“…SPAD devices have been demonstrated in 90 nm CMOS technologies, but with significantly lower performance [101]. A notable exception is the 90 nm SPAD device reported by Webster et al [102], where the deep n-well/p-epi junction is used as the active junction, achieving a peak PDE of 44 % at 690 nm and better than 20 % at 850 nm. Timing jitter as low as 50 ps FWHM was demonstrated, although the timing distribution was affected by a relatively long diffusion tail.…”

Section: Available Spad Technologiesmentioning

confidence: 99%

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Silicon Photon-Counting Avalanche Diodes for Single-Molecule Fluorescence Spectroscopy

Michalet

Ingargiola

Colyer

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements.

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Section: Discussionmentioning

confidence: 99%

Section: Available Spad Technologiesmentioning

confidence: 99%

Silicon Photon-Counting Avalanche Diodes for Single-Molecule Fluorescence Spectroscopy

Michalet

Ingargiola

Colyer

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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“…State-of-the-art SPAD technology has reached the 90nm CMOS technology node [4], [5]. In this paper, we propose a new APD fully characterized and modeled in a standard 65nm CMOS process that operates in Geiger and proportional mode.…”

Section: Introductionmentioning

confidence: 99%

A Geiger mode APD fabricated in standard 65nm CMOS technology

Charbon

Yoon

Maruyama

2013

2013 IEEE International Electron Devices Meeting

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We present the first avalanche photodiode (APD) successfully fabricated in standard 65nm CMOS technology. The APD operates both in proportional and Geiger mode at -60C to +60C temperature range. The device comprises an octagonal n+p-well junction surrounded by an n-tub guard-ring; its photon detection probability peaks at 450nm with 200mV excess bias and it is above 1% between 350 and 750nm. The dark count rate is 1.5kHz/µm 2 at 200mV excess bias, while afterpulsing is less than 1% for a dead time longer than 5µs and timing jitter is better than 235ps. Applications include low-power, ultra-high-speed quantum number generators, time-of-flight 3D image sensors, LIDAR detectors, and time-resolved spectroscopy.

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“…Advanced SPAD array manufacturing techniques such as 3D stacking are expected to push fill-factor and spatial resolution to comparable levels to incumbent technologies such as sCMOS or EMCCD whilst offering picosecond time resolution. Recent developments in CMOS SPAD technology have shown significant improvements in many features [145], such as the dead time [146], dark count [142,147], pixel miniaturization [148], and quantum efficiency in the longer wavelength region [149]. It is expected high resolution CMOS SPAD arrays for ranging applications (Geiger mode light detection and ranging (LIDAR)) [137,150] will soon be applied to FLIM.…”

Section: Spad Arraysmentioning

confidence: 99%