2021
DOI: 10.1016/j.solmat.2021.111180
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A-site tailoring in the vacancy-ordered double perovskite semiconductor Cs2SnI6 for photovoltaic application

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Cited by 33 publications
(27 citation statements)
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“…[ 66 ] Regardless of the theoretical prediction, a comprehensive experimental interface study between CuSCN and Ti‐based vacancy‐ordered‐DHPs needs to be executed in accessing the material potential ability. Cu 2 O is a p‐type semiconductor with very high hole mobility (256 cm 2 Vs −1 ) [ 27 ] and a low electron affinity (3.2 eV) value. [ 67 ] Using Cu 2 O as HTL increases the photovoltaic performances due to the high mobility, low energy loss, and low recombination loss properties.…”
Section: Performance Of Ti‐based Vacancy‐ordered‐dhps Solar Cell (Com...mentioning
confidence: 99%
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“…[ 66 ] Regardless of the theoretical prediction, a comprehensive experimental interface study between CuSCN and Ti‐based vacancy‐ordered‐DHPs needs to be executed in accessing the material potential ability. Cu 2 O is a p‐type semiconductor with very high hole mobility (256 cm 2 Vs −1 ) [ 27 ] and a low electron affinity (3.2 eV) value. [ 67 ] Using Cu 2 O as HTL increases the photovoltaic performances due to the high mobility, low energy loss, and low recombination loss properties.…”
Section: Performance Of Ti‐based Vacancy‐ordered‐dhps Solar Cell (Com...mentioning
confidence: 99%
“…Table 6 outlines the high performance profile of MoO 3 and ZnO due to the lowest negative valence band offset (VBO), accentuating optimal band alignment with Cs 2 TiBr 6 (Figure 9). MoO 3 is an ideal HTL [27,61,74] . material in solar cell applications due to possessing ambient stability, high conductivity, high hole mobility, and excellent hole extractor properties.…”
Section: Selection Of Etl and Htl Materials For Ti-based Vacancy-orde...mentioning
confidence: 99%
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“…Therefore, only Cs was selected as the A site to make A 2 BB′X 6 still have black phase structures. 45…”
Section: Resultsmentioning
confidence: 99%