A Smooth EKV-Based DC Model for Accurate Simulation of Printed Transistors and Their Process Variations

Rasheed, Farhan; Golanbari, Mohammad Saber; Marques, Gabriel Cadilha; Tahoori, Mehdi B.; Aghassi‐Hagmann, Jasmin

doi:10.1109/ted.2017.2786160

Cited by 30 publications

(12 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The main objective of this section is to check the suitability of our model (1) and (10), in combination with the evolutionary algorithm [36], to characterize single-channel-length OTFTs with Schottky-limited contacts. To do this, we propose the following four experiments, grouped into two different evolutionary configurations: (A1) the evolutionary procedure uses (1) and (10), and (A2) the procedure uses (1) and (9). First, these two configurations perform a single-transistor parameter extraction [36] (Experiments A1-1 and A2-1).…”

Section: Experiments A: Schottky-limited Contactsmentioning

confidence: 99%

“…These values are collected in Table 1. They are introduced in (1) and (10) or in (1) and (9) to calculate the numerical output characteristics. Finally, they are compared to the experimental output characteristics and the Normalized Root Mean Squared Error (NRMSE [64]) are computed.…”

Section: Experiments A: Schottky-limited Contactsmentioning

confidence: 99%

“…Organic thin-film transistors (OTFTs) are among the most popular technologies for lightweight, low-cost, flexible, and stretchable electronics [1][2][3][4]. Recently, significant advances were made in improving their important limitations such as a poor mobility [5][6][7][8], high process variability [9] or nonflexible electrodes [10]. Nevertheless, even these state-of-theart OTFTs are often limited by their contact regions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Versatile model for the contact region of organic thin-film transistors

Romero

González

Deen

et al. 2020

Organic Electronics

View full text Add to dashboard Cite

Contact effects in organic thin film transistors (OTFTs) remain an important problem to be solved in these devices. Therefore, the correct physio-chemical modeling of the contact regions in OTFTs is necessary. In this work, a standard model for the contact region of OTFTs is proposed. It is a versatile model that describes the current-voltage characteristics of different kinds of contacts. It reproduces the behavior of Schottky barrier or space-charge limited contacts. It is a simple unified model since only a single parameter is necessary in order to distinguish between both kinds of contacts. The model is easily integrated in a generic compact model for the current-voltage characteristics of OTFTs. The resulting compact model, used in combination with an evolutionary parameter extraction procedure, allows to extract the intrinsic parameters and the current-voltage curves at the contact of single short-channel transistors. There is no need to use transistors with multiple channel lengths to accurately characterize the contact region or the active channel of the transistor. The model is tested with published experimental data of OTFTs with Schottky barrier or space-charge limited contacts. Finally, the method has been used as a diagnostic tool to analyze how an ammonia sensor reacts to different concentrations of the ammonia gas. Interestingly, alterations in the contact region have been detected when the gas concentration varies, transforming the space-charge limited contact of a pristine OTFT into a Schottky barrier contact under the exposure of gas.

show abstract

Section: Experiments A: Schottky-limited Contactsmentioning

confidence: 99%

Section: Experiments A: Schottky-limited Contactsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Versatile model for the contact region of organic thin-film transistors

Romero

González

Deen

et al. 2020

Organic Electronics

View full text Add to dashboard Cite

show abstract

“…The later discussed circuit properties can be deduced on the basis of the transistor properties. [16,[41][42][43] To achieve high performance EGFETs, the indium oxide films need to be annealed at temperatures around 400 °C. In the past, it has been shown that these EGFETs perform reliably over a wide temperature range.…”

Section: Electrolyte-gated Field-effect Transistors Based On Indium Omentioning

confidence: 99%

“…[40] The EGFETs were also successfully modeled and integrated into a process design kit (PDK), which supports the circuit design flow. [16,[41][42][43] To achieve high performance EGFETs, the indium oxide films need to be annealed at temperatures around 400 °C. [44] By using chemical or photonic curing methods, the indium oxide film can be cured also at room temperatures.…”

Section: Electrolyte-gated Field-effect Transistors Based On Indium Omentioning

confidence: 99%

Progress Report on “From Printed Electrolyte‐Gated Metal‐Oxide Devices to Circuits”

et al. 2019

Self Cite

View full text Add to dashboard Cite

Printed electrolyte‐gated oxide electronics is an emerging electronic technology in the low voltage regime (≤1 V). Whereas in the past mainly dielectrics have been used for gating the transistors, many recent approaches employ the advantages of solution processable, solid polymer electrolytes, or ion gels that provide high gate capacitances produced by a Helmholtz double layer, allowing for low‐voltage operation. Herein, with special focus on work performed at KIT recent advances in building electronic circuits based on indium oxide, n‐type electrolyte‐gated field‐effect transistors (EGFETs) are reviewed. When integrated into ring oscillator circuits a digital performance ranging from 250 Hz at 1 V up to 1 kHz is achieved. Sequential circuits such as memory cells are also demonstrated. More complex circuits are feasible but remain challenging also because of the high variability of the printed devices. However, the device inherent variability can be even exploited in security circuits such as physically unclonable functions (PUFs), which output a reliable and unique, device specific, digital response signal. As an overall advantage of the technology all the presented circuits can operate at very low supply voltages (0.6 V), which is crucial for low‐power printed electronics applications.

show abstract