A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels

Abstract

In this paper, a snapback-free and fast-switching SOI LIGBT with three electron extracting channels (TEC) is proposed and investigated. Compared with SBM LIGBT, the trench gate of n-MOS is changed to a planar gate, and a P-region is added to prevent N+ short circuit while providing electron extracting channel. Simulation results show that TEC decreases EOFF by 15% at VON =1.8V relative to SBM when all three channels are open, while TEC still decreases EOFF by 10% at VON =1.55V relative to SBM when only two channels are available. The device achieves the same breakdown voltage level of 603V as SBM without additional trench etch process required.