A snapback-free RC-IGBT with Alternating N/P buffers

Deng, Gaoqiang; Luo, Xiaorong; Zhou, Kun; He, Qingyuan; Ruan, Xinliang; Liu, Qing; Sun, Tao; Zhang, Bo

doi:10.23919/ispsd.2017.7988943

Cited by 19 publications

(12 citation statements)

References 4 publications

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“…For a collector length (LC) 30µm, the AB RC-IGBT can eliminate snapback entirely, whereas a collector length of 80µm is required for RC-IGBT with floating p-region to eliminate snapback: shorter devices are more desirable to reduce the current crowding at the anode short during reverse conduction. [32].…”

Section: B Rc-igbt With Alternating N/p Buffers (Ab Rc-igbt)mentioning

confidence: 99%

“…Increasing the thickness of the buffer layer (Tbf) also helps supress snapback by shielding electrons in unipolar mode, but this in turn reduces injection efficiency and increases the on-state losses during IGBT conduction. [32] C. RC-IGBT with double gate structure…”

Section: B Rc-igbt With Alternating N/p Buffers (Ab Rc-igbt)mentioning

confidence: 99%

“…This geometry provided a minimal snapback in the forward conduction, but in the reverse direction the on-state losses increased by 91%. The behaviour of the AB RC-IGBT with different features was investigated, where the ratio of Lpf/Lnf was fixed at 2 in accordance with the study in [32]. Doubling the number of buffer implants across the width of the device (Lpf/Lnf=2) reduced the snapback by 17% but increased the on-resistance in the reverse conduction by over 6 times.…”

Section: Rc-igbt Concept Comparisonmentioning

confidence: 99%

See 2 more Smart Citations

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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The Reverse Conducting IGBT has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to, motor control, resonant converters, and switch mode power supplies. However, the device inherently suffers from many undesirable design trade-offs which have prevented its widespread use. One of the most critical issues is the snapback seen in the forward conduction characteristic which can prevent full turn-on of the device and result in the device becoming unsuitable for parallel operation (required in many high voltage modules). This phenomenon can be suppressed but at the expense of the reverse conduction performance. This paper provides an overview of the technical design challenges presented by the RC-IGBT structure and reviews alternative device concepts which have been proposed in literature. Analysis shows that these alternate concepts either present a trade-off in performance characteristics, an inability to be manufactured, or a requirement for a custom gate drive.

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Section: B Rc-igbt With Alternating N/p Buffers (Ab Rc-igbt)mentioning

confidence: 99%

Section: B Rc-igbt With Alternating N/p Buffers (Ab Rc-igbt)mentioning

confidence: 99%

Section: Rc-igbt Concept Comparisonmentioning

confidence: 99%

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Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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“…In ref [16,17], an oxide plug and P-float have been introduced in the collector as an electron barrier in the unipolar mode to suppress the snapback by the increase of the V PN between the P-Collector/ N-buffer junction. Additionally, the Trench Oxide Layer (TOL) technology with (Enhanced Bulk Field) ENBULF theory [18,19,20,21] and the (Reduced Surface Field) RESURF [22, 23,24,24,25,26] theory is widely applied to increase the breakdown voltage (BV) by the modulation of the electric field between the bulk and the surface [27,28,29,30].…”

Section: Introductionmentioning

confidence: 99%

A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO<sub>2</sub> layer

Chen

Huang

et al. 2019

IEICE Electron. Express

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A RC-LIGBT with separated LDMOS and LIGBT by the Lshaped SiO 2 layer is proposed and investigated. The L-shaped SiO 2 layer enhances the bulk electric field remarkably and decreases the surface electric field substantially in the breakdown state. At the forward conduction, the current is dominated by the unipolar mode (LDMOS) before point A and bipolar mode (LIGBT) after point B, the snapback is eliminated between point A and B due to the conductivity modulation is restricted at the LIGBT region. The Free-Wheeling diode (FWD) is realized by the LDMOS region at reverse conduction state. Compared with the conventional RC-LIGBT, the proposed device shows snapbackfree property and it increases the BV by 107% at the same time.

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“…More recent studies have focussed on the possibility of applying the SJ to the anode side [9], similar to the Alternating Buffer Reverse Conducting IGBT (AB RC-IGBT) concept [10]. In this alternative SJ device, it was shown that pillar location is independent of the features of the cathode, thus making processing simpler as there is no need for alignment [9].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

Findlay

Udrea

Antoniou

2019

IEEE Electron Device Lett.

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This letter presents the Dual Implant SuperJunction (SJ) trench Reverse-Conducting (RC) Insulated Gate Bipolar Transistor (IGBT) concept with two implanted SJ pillars in the drift region; one from the cathode side and another from the anode side. The proposed device is compatible with current manufacturing processes and enables a full SJ structure to be achieved in a 1.2kV device as alignment between the pillars is not required. Extensive Technology Computer Aided Design (TCAD) simulations have been performed and demonstrated that utilising this dual implantation technique can result in a 77% reduction in turn-off losses for a full SJ structure, compared to a conventional RC-IGBT. The results show that any snapback in the on-state waveform significantly increases the turn-off losses and only a deep SJ device (pillar gap < 10μm) warrants the additional processing expense. 

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A snapback-free RC-IGBT with Alternating N/P buffers

Cited by 19 publications

References 4 publications

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO<sub>2</sub> layer

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

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