A snapback-free reverse-conducting IGBT with multiple extraction channels

Chen, Weizhong; Lin, Xuwei; Li, Shun; Huang, Yao; Huang, Yi; Han, Zhengsheng

doi:10.1007/s43236-021-00347-0

Cited by 2 publications

(2 citation statements)

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“…Fortunately, in recent years, many novel RC-IGBT structures have been proposed to suppress the snapback effect [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. As detailed in [7], the simple collector shorting layout design, which provides a gradual decrease in the width of collector P+ from the center of the chip towards the outer edges while keeping a constant width of collector N+, can be used with RC-IGBT to eliminate the snapback effect.…”

Section: Introductionmentioning

confidence: 99%

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Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure

Zhang,

Qiu,

Zhu

et al. 2023

Electronics

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In this paper, a new concept of low-loss Reverse-Conducting Insulated-Gate Bipolar Transistor with Collector-side Injection-Enhanced structure (RC-IGBT-CIE) is proposed and investigated using simulations. In reverse conduction (the on state of the diode mode), the CIE structure enhances the collector-side carrier concentration of the proposed RC-IGBT-CIE, which results in low reverse-conducting voltage (VF). The low reverse recovery loss and low turn-on loss using an inductive load circuit are obtained by using the modified carrier concentration profile resulted from both the CIE effect and the low-injection-efficiency p-emitter. Simulation results show that, with the same sum of turn-on loss and reverse recovery loss (Eon + Erec), when compared to conventional RC-IGBT with anti-parallel thyristor (RC-IGBT-thyristor), the RC-IGBT-CIE reduces VF by 9.2%, and meanwhile, with the same total conducting voltage (Von, sat + VF), the total switching loss (Eoff + Eon + Erec) is reduced by 20.9% but does not sacrifice short-circuit capability.

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Section: Introductionmentioning

confidence: 99%

“…Some RC-IGBTs with collector trench are also proposed without additional control [14,15]. Other snapback-free RC-IGBTs, e.g., the collector P-floating [16][17][18][19], the N-Si/n-Ge heterojunction [20], and the P-drift [21], which utilize terminal region [22] and anti-parallel thyristor [23,24] are also reported in the literature.…”

Section: Introductionmentioning

confidence: 99%