A Snapback Suppressed <i>RC</i>-IGBT With N-Si/n-Ge Heterojunction at Low Temperature

Zhang, Xiaodong; Wang, Ying; Bao, Meng-Tian; Li, Xingji; Yang, Jianqun; Cao, Fei

doi:10.1109/ted.2021.3106620

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…Some researchers embed heterojunction diodes in power devices to improve the electrical performance of the devices. [24][25][26][27][28][29] Yu et al [24] reported a novel SiC power MOS-FET structure. Yoon [25] proposed a SiC MOSFET insted heterojunction diode, which provided some protection against the electric field.…”

Section: Introductionmentioning

confidence: 99%

A SiC asymmetric cell trench MOSFET with a split gate and integrated p⁺-poly Si/SiC heterojunction freewheeling diode

et al. 2023

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A new SiC asymmetric cell trench MOSFET with split gate (SG) and integrated p+-polySi/SiC heterojunction freewheeling diode (SGHJD-TMOS) is investigated in this article. SG structure of the SGHJD-TMOS structure can effectively reduce the gate-drain capacitance and reduce the high gate oxide electric field. The integrated p+-polySi/SiC heterojunction freewheeling diode substantially improves body diode characteristics and reduces switching losses without degrading the static characteristics of the device. Numerical analysis results show that compared with the conventional asymmetric cell trench MOSFET (CA-TMOS), the high-frequency figure of merit (HF-FOM, R on,sp×Q gd,sp) is reduced by 92.5%, and the gate oxide electric field is reduced by 75%, respectively. In addition, forward conduction voltage drop (V f) and gate-drain charge (Q gd) are reduced from 2.90 V and 63.5 µC/cm2 for the CA-TMOS to 1.80 V and 26.1 µC/cm2 for the SGHJD-TMOS, respectively. Compared with the CA-TMOS, the turn-on loss (Eon) and turn-off loss (Eoff) of the SGHJD-TMOS are reduced by 21.1% and 12.2%, respectively.

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Section: Introductionmentioning

confidence: 99%

A SiC asymmetric cell trench MOSFET with a split gate and integrated p⁺-poly Si/SiC heterojunction freewheeling diode

et al. 2023

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“…Fortunately, in recent years, many novel RC-IGBT structures have been proposed to suppress the snapback effect [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. As detailed in [7], the simple collector shorting layout design, which provides a gradual decrease in the width of collector P+ from the center of the chip towards the outer edges while keeping a constant width of collector N+, can be used with RC-IGBT to eliminate the snapback effect.…”

Section: Introductionmentioning

confidence: 99%

“…Some RC-IGBTs with collector trench are also proposed without additional control [14,15]. Other snapback-free RC-IGBTs, e.g., the collector P-floating [16][17][18][19], the N-Si/n-Ge heterojunction [20], and the P-drift [21], which utilize terminal region [22] and anti-parallel thyristor [23,24] are also reported in the literature.…”

Section: Introductionmentioning

confidence: 99%

Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure

Zhang,

Qiu,

Zhu

et al. 2023

Electronics

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In this paper, a new concept of low-loss Reverse-Conducting Insulated-Gate Bipolar Transistor with Collector-side Injection-Enhanced structure (RC-IGBT-CIE) is proposed and investigated using simulations. In reverse conduction (the on state of the diode mode), the CIE structure enhances the collector-side carrier concentration of the proposed RC-IGBT-CIE, which results in low reverse-conducting voltage (VF). The low reverse recovery loss and low turn-on loss using an inductive load circuit are obtained by using the modified carrier concentration profile resulted from both the CIE effect and the low-injection-efficiency p-emitter. Simulation results show that, with the same sum of turn-on loss and reverse recovery loss (Eon + Erec), when compared to conventional RC-IGBT with anti-parallel thyristor (RC-IGBT-thyristor), the RC-IGBT-CIE reduces VF by 9.2%, and meanwhile, with the same total conducting voltage (Von, sat + VF), the total switching loss (Eoff + Eon + Erec) is reduced by 20.9% but does not sacrifice short-circuit capability.

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RC-IGBT snapback suppression using silicon germanium collector regions

Yoon,

Park,

Kim

et al. 2024

J. Power Electron.

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A Snapback Suppressed RC-IGBT With N-Si/n-Ge Heterojunction at Low Temperature

Cited by 5 publications

References 18 publications

A SiC asymmetric cell trench MOSFET with a split gate and integrated p⁺-poly Si/SiC heterojunction freewheeling diode

A SiC asymmetric cell trench MOSFET with a split gate and integrated p⁺-poly Si/SiC heterojunction freewheeling diode

Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure

RC-IGBT snapback suppression using silicon germanium collector regions

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A Snapback Suppressed RC-IGBT With N-Si/n-Ge Heterojunction at Low Temperature

Cited by 5 publications

References 18 publications

A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode

A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode

Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure

RC-IGBT snapback suppression using silicon germanium collector regions

Contact Info

Product

Resources

About

A SiC asymmetric cell trench MOSFET with a split gate and integrated p⁺-poly Si/SiC heterojunction freewheeling diode

A SiC asymmetric cell trench MOSFET with a split gate and integrated p⁺-poly Si/SiC heterojunction freewheeling diode