A solution-based ALD route towards (CH3NH3)(PbI3) perovskite via lead sulfide films

Koch, Vanessa M.; Barr, Maïssa K. S.; Büttner, Pascal; Mínguez-Bacho, Ignacio; Döhler, Dirk; Winzer, Bettina; Reinhardt, Elisabeth; Segets, Doris; Bachmann, Julien

doi:10.1039/c9ta09715e

Cited by 25 publications

(19 citation statements)

References 41 publications

(55 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The XRD pattern (Figure S1a in the Supporting Information) yielded characteristic (110) and (220) peaks of the perovskite at appropriate positions, indicating the formation of a tetragonal phase at room temperature adopting a space group of I 4/ mcm . To estimate the crystallite size ( D ) from the XRD pattern, we applied the Scherrer equation, and the average size of the crystallites in the thin film appeared to be around 60 nm which is comparable to the reported ones . The respective optical absorption spectrum (Figure S1b in the Supporting Information) showed two dominant and distinct photoinduced peaks located at around 490 and 740 nm, which are characteristic of MAPI films deposited from a polar solvent like DMF .…”

Section: Resultssupporting

confidence: 70%

“…13 To estimate the crystallite size (D) from the XRD pattern, we applied the Scherrer equation, and the average size of the crystallites in the thin film appeared to be around 60 nm which is comparable to the reported ones. 14 The respective optical absorption spectrum (Figure S1b in the Supporting Information) showed two dominant and distinct photoinduced peaks located at around 490 and 740 nm, which are characteristic of MAPI films deposited from a polar solvent like DMF. 15 The optical band gap of the perovskite, as estimated from the respective Tauc plot (Figure S1c in the Supporting Information), turned out to be 1.58 eV, which was in fair agreement with the reported values.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Noncontact Tunneling in Methylammonium Lead Iodide (CH₃NH₃PbI₃): Evidence of Bipolar Resistive Switching through Defect Migration

Paramanik

Chatterjee

Pal

2020

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

We present resistive switching characteristics of methylammonium lead iodide (CH3NH3PbI3) films through a noncontact electrical poling process toward memristive applications. The noncontact nature of the poling process was induced with a scanning tunneling microscope tip, so that the formation of metal filaments could be ruled out. The perovskite films were seen to exhibit resistive switching upon application of a voltage pulse in the presence of a high-resistive state and a low-resistive state; the magnitude and the width of the voltage pulse were varied to deliberate on the parameters necessary to activate the switching phenomenon. Among the underlying mechanisms proposed so far, the formation and the subsequent rupture of metal-like filaments because of the migration of iodide vacancies have been identified to be responsible for resistive switching in the perovskite material.

show abstract

Section: Resultssupporting

confidence: 70%

Section: ■ Results and Discussionmentioning

confidence: 99%

Noncontact Tunneling in Methylammonium Lead Iodide (CH₃NH₃PbI₃): Evidence of Bipolar Resistive Switching through Defect Migration

Paramanik

Chatterjee

Pal

2020

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…34 The bands at 142.7 and 137.9 eV were associated with the Pb 4f core levels of Pb 2+ within a PbO environment. 28,35 The presence of PbO is related to the partial surface oxidation of the material upon exposure to the ambient atmosphere. 36 The S 2p XPS spectrum of PbS displayed just one peak that was fitted with two bands located at 162.0 and 160.8 eV, which corresponded to S 2p 1/2 and S 2p 3/2 core levels of S 2− anions within PbS.…”

Section: Methodsmentioning

confidence: 99%

PbS–Pb–Cu_xS Composites for Thermoelectric Application

Liu

Zhang

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Composite materials offer numerous advantages in a wide range of applications, including thermoelectrics. Here, semiconductor−metal composites are produced by just blending nanoparticles of a sulfide semiconductor obtained in aqueous solution and at room temperature with a metallic Cu powder. The obtained blend is annealed in a reducing atmosphere and afterward consolidated into dense polycrystalline pellets through spark plasma sintering (SPS). We observe that, during the annealing process, the presence of metallic copper activates a partial reduction of the PbS, resulting in the formation of PbS−Pb− Cu x S composites. The presence of metallic lead during the SPS process habilitates the liquid-phase sintering of the composite. Besides, by comparing the transport properties of PbS, the PbS−Pb−Cu x S composites, and PbS−Cu x S composites obtained by blending PbS and Cu x S nanoparticles, we demonstrate that the presence of metallic lead decisively contributes to a strong increase of the charge carrier concentration through spillover of charge carriers enabled by the low work function of lead. The increase in charge carrier concentration translates into much higher electrical conductivities and moderately lower Seebeck coefficients. These properties translate into power factors up to 2.1 mW m −1 K −2 at ambient temperature, well above those of PbS and PbS + Cu x S. Additionally, the presence of multiple phases in the final composite results in a notable decrease in the lattice thermal conductivity. Overall, the introduction of metallic copper in the initial blend results in a significant improvement of the thermoelectric performance of PbS, reaching a dimensionless thermoelectric figure of merit ZT = 1.1 at 750 K, which represents about a 400% increase over bare PbS. Besides, an average ZT ave = 0.72 in the temperature range 320−773 K is demonstrated.

show abstract

“…ALD has been extensively implemented into semiconducting processes in the past decade 37,38 . It is suitable to grow high-quality dielectric and semiconductor on different substrate even including the porous and high-aspect ratio substrates [39][40][41][42] , which has been widely used in areas of thin film solar cell, photodetectors and other electronic devices [43][44][45][46] . Besides, ALD is also a powerful method in thin film encapsulations for flexible electronics, due to the advantages of free pin-hole, excellent conformality and precise nanoscale thickness control on large area [47][48][49] .…”

Section: (Iii) and (Iv)mentioning

confidence: 99%

Atomic layer deposition for quantum dots based devices

Zhou

Liu

Wen

et al. 2020

Opto-Electronic Advances

View full text Add to dashboard Cite

Quantum dots (QDs) are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency, tunable bandgap and facile solution synthesis. Nevertheless, the limited optoelectronic performance and poor lifetime of QDs devices hinder their further applications. As a gas-phase surface treatment method, atomic layer deposition (ALD) has shown the potential in QDs surface modification and device construction owing to the atomic-level control and excellent uniformity/conformality. In this perspective, the attempts to utilize ALD techniques in QDs modification to improve the photoluminance efficiency, stability, carrier mobility, as well as interfacial carrier utilization are introduced. ALD proves to be successful in the photoluminance quantum yield (PLQY) enhancement due to the elimination of QDs surface dangling bonds and defects. The QDs stability and devices lifetime are improved greatly through the introduction of ALD barrier layers. Furthermore, the carrier transport is ameliorated efficiently by infilling interstitial spaces during ALD process. Attributed to the ultra-thin and dense coating on the interface, the improvement on optoelectronic performance is achieved. Finally, the challenges of ALD applications in QDs at present and several prospects including ALD process optimization, in-situ characterization and computational simulations are proposed.

show abstract

A solution-based ALD route towards (CH₃NH₃)(PbI₃) perovskite via lead sulfide films

Abstract: Lead sulfide is deposited from the salts in ‘solution ALD’ mode and converted directly to the hybrid perovskite CH3NH3PbI3.

Cited by 25 publications

References 41 publications

Noncontact Tunneling in Methylammonium Lead Iodide (CH₃NH₃PbI₃): Evidence of Bipolar Resistive Switching through Defect Migration

Noncontact Tunneling in Methylammonium Lead Iodide (CH₃NH₃PbI₃): Evidence of Bipolar Resistive Switching through Defect Migration

PbS–Pb–Cu_xS Composites for Thermoelectric Application

Atomic layer deposition for quantum dots based devices

Contact Info

Product

Resources

About

A solution-based ALD route towards (CH3NH3)(PbI3) perovskite via lead sulfide films

Abstract: Lead sulfide is deposited from the salts in ‘solution ALD’ mode and converted directly to the hybrid perovskite CH3NH3PbI3.

Cited by 25 publications

References 41 publications

Noncontact Tunneling in Methylammonium Lead Iodide (CH3NH3PbI3): Evidence of Bipolar Resistive Switching through Defect Migration

Noncontact Tunneling in Methylammonium Lead Iodide (CH3NH3PbI3): Evidence of Bipolar Resistive Switching through Defect Migration

PbS–Pb–CuxS Composites for Thermoelectric Application

Atomic layer deposition for quantum dots based devices

Contact Info

Product

Resources

About

A solution-based ALD route towards (CH₃NH₃)(PbI₃) perovskite via lead sulfide films

Noncontact Tunneling in Methylammonium Lead Iodide (CH₃NH₃PbI₃): Evidence of Bipolar Resistive Switching through Defect Migration

Noncontact Tunneling in Methylammonium Lead Iodide (CH₃NH₃PbI₃): Evidence of Bipolar Resistive Switching through Defect Migration

PbS–Pb–Cu_xS Composites for Thermoelectric Application