A solvent-based surface cleaning and passivation technique for suppressing ionic defects in high-mobility perovskite field-effect transistors

She, Xiao-Jian; Chen, Chen; Divitini, Giorgio; Zhao, Baodan; Li, Yang; Wang, Junzhan; Orri, Jordi Ferrer; Cui, Lin‐Song; Xu, Weidong; Peng, Jun; Wang, Shuo; Sadhanala, Aditya; Sirringhaus, Henning

doi:10.1038/s41928-020-00486-5

Cited by 120 publications

(119 citation statements)

References 39 publications

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“…Over the past decade, lead-halide perovskites have risen to prominence in photovoltaics-their certified single-junction power conversion efficiencies (PCEs) now above 25%-as well as in other optoelectronic applications such as lightemitting devices, photodetectors, and transistors. [1][2][3][4][5][6] A key enabler of this formidable rise is their defect tolerance. [7][8][9] Indeed, while compositional and structural defects are inevitably present in polycrystalline semiconductors deposited at low temperatures, through solution-based methods, [10] and in common laboratory settings, thin-film lead-iodide-based perovskites remarkably manifest an optoelectronic behavior that is largely insensitive to such defects.…”

Section: Introductionmentioning

confidence: 99%

Assessing the Impact of Defects on Lead‐Free Perovskite‐Inspired Photovoltaics via Photoinduced Current Transient Spectroscopy

Pecunia

Zhao

Kim

et al. 2021

Advanced Energy Materials

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The formidable rise of lead‐halide perovskite photovoltaics has energized the search for lead‐free perovskite‐inspired materials (PIMs) with related optoelectronic properties but free from toxicity limitations. The photovoltaic performance of PIMs closely depends on their defect tolerance. However, a comprehensive experimental characterization of their defect‐level parameters—concentration, energy depth, and capture cross‐section—has not been pursued to date, hindering the rational development of defect‐tolerant PIMs. While mainstream, capacitance‐based techniques for defect‐level characterization have sparked controversy in lead‐halide perovskite research, their use on PIMs is also problematic due to their typical near‐intrinsic character. This study demonstrates on four representative PIMs (Cs3Sb2I9, Rb3Sb2I9, BiOI, and AgBiI4) for which Photoinduced Current Transient Spectroscopy (PICTS) offers a facile, widely applicable route to the defect‐level characterization of PIMs embedded within solar cells. Going beyond the ambiguities of the current discussion of defect tolerance, a methodology is also presented to quantitatively assess the defect tolerance of PIMs in photovoltaics based on their experimental defect‐level parameters. Finally, PICTS applied to PIM photovoltaics is revealed to be ultimately sensitive to defect‐level concentrations <1 ppb. Therefore, this study provides a versatile platform for the defect‐level characterization of PIMs and related absorbers, which can catalyze the development of green, high‐performance photovoltaics.

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Section: Introductionmentioning

confidence: 99%

Assessing the Impact of Defects on Lead‐Free Perovskite‐Inspired Photovoltaics via Photoinduced Current Transient Spectroscopy

Pecunia

Zhao

Kim

et al. 2021

Advanced Energy Materials

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“…Early studies quickly realized that screening of the electronic transport by ionic migration, along with the structural fluctuations and dynamical disorder (rotations of the MA unit around its axis and PbX 6 octahedral distortions) make electrostatic gating of lead-based 3D perovskites non trivial. [27,29,30,53,92,93] These phenomena are thermally activated, and thus can be reduced and often even suppressed upon decreasing the temperature, resulting in several early studies reporting on the performance at 70-80 K. [27,53] Recent advances in material and device engineering have led to more reliable transistor behavior, with low hysteresis and charge carrier mobilities >1 cm 2 V -1 s -1 at room temperature, [33,52,74,94] which allowed investigations of temperature-related effects. Temperature dependent studies provide important details about the charge transport mechanism in perovskite materials, which remains elusive.…”

Section: Effect Of Temperaturementioning

confidence: 99%

“…[144,152,172,174,175] Polymer dielectrics such as Cytop (ε r = 2.1), or PMMA (ε r = 4.9), bring several distinct advantages. [33,65,86,106,120,121,128,151,152] First, their interface with perovskite semiconductors typically yields lower trap densities due to the fact that they are more chemically inert than SiO 2 , which, in turn leads to improved device performance. [120,128] Second, their mechanical flexibility opens the prospects for large area flexible device arrays.…”

Section: Dielectric Materials Used In Perovskite Fetsmentioning

confidence: 99%

“…A wide variety of contact materials has been tested in perovskite FET fabrication, including Ag, Al, InZnO (IZO), InSnO (ITO), Pd, Pt, Cr, Y, and graphene. [17,30,33,93,109,152,177,178] The most common choice remains Au, or Au chemically treated with SAMs. [31,65,74,86,94,120] 2D polycrystalline perovskite FETs made using Au contacts (no treatments or interlayers) demonstrated only p-type transport.…”

Section: Source-drain Electrodes Used In Perovskite Fetsmentioning

confidence: 99%

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Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Paulus

Tyznik

Jurchescu

et al. 2021

Adv Funct Materials

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Field-effect transistors (FETs) are key elements in modern electronics and hence are attracting immense scientific and commercial attention. The recent emergence of metal halide perovskite materials and their tremendous success in the field of photovoltaics have triggered the exploration of their application in other (opto)electronic devices, including FETs and phototransistors. In this review, the current status of the field is discussed, the challenges are highlighted, and an outlook for the future perspectives of perovskite FETs is provided. First, attention is drawn to the device physics and the fundamental processes that influence these devices, including the role of ion migration and defects, effects of temperature, light, and measurement conditions. Next, the performance of perovskite transistors and phototransistors reported to date are surveyed and critically assessed. Finally, the key challenges that impede perovskite transistor progress are outlined and discussed. The insights gained from the study of other perovskite optoelectronic devices may be adopted to address these challenges and advance this exciting field of research closer to the industrial application are examined.

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“…has been a focus of research interest, stemming from its superior physical properties such as high absorption coefficients and long carrier diffusion length [ 1 , 2 ]. The low cost of raw materials and the ease of preparation in which the crystallization is readily attainable in the solution phase at room temperature [ 3 , 4 , 5 ] have led the extensive studies regarding the OIHPs material to diverse applications including photonic [ 6 , 7 , 8 ], electronic [ 9 , 10 ], and optoelectronic [ 11 , 12 ] devices. Meanwhile, the efforts to fabricate OIHPs with various morphologies in low dimension forms also have been tried, especially in nanoparticles, thin films, and nanowires.…”

Section: Introductionmentioning

confidence: 99%

Orientation-Dependent Conversion of VLS-Grown Lead Iodide Nanowires into Organic-Inorganic Hybrid Perovskites

et al. 2021

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In this study, we demonstrate Sn-assisted vapor-liquid-solid (VLS) growth of lead iodide (PbI2) nanowires with van der Waals layered crystal structure and subsequent vapor-phase conversion into methylammonium lead iodide (CH3NH3PbI3) perovskites. Our systematic microscopic investigations confirmed that the VLS-grown PbI2 nanowires display two major growth orientations of [0001] and [1¯21¯0], corresponding to the stacking configurations of PbI2 layers to the nanowire axis (transverse for [0001] vs. parallel for [1¯21¯0]). The resulting difference in the sidewall morphologies was correlated with the perovskite conversion, where [0001] nanowires showed strong localized conversion at top and bottom, as opposed to [1¯21¯0] nanowires with an evenly distributed degree of conversion. An ab initio energy calculation suggests that CH3NH3I preferentially diffuses and intercalates into (112¯0) sidewall facets parallel to the [1¯21¯0] nanowire axis. Our results underscore the ability to control the crystal structures of van der Waals type PbI2 in nanowire via the VLS technique, which is critical for the subsequent conversion process into perovskite nanostructures and corresponding properties.

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A solvent-based surface cleaning and passivation technique for suppressing ionic defects in high-mobility perovskite field-effect transistors

Cited by 120 publications

References 39 publications

Assessing the Impact of Defects on Lead‐Free Perovskite‐Inspired Photovoltaics via Photoinduced Current Transient Spectroscopy

Assessing the Impact of Defects on Lead‐Free Perovskite‐Inspired Photovoltaics via Photoinduced Current Transient Spectroscopy

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

Orientation-Dependent Conversion of VLS-Grown Lead Iodide Nanowires into Organic-Inorganic Hybrid Perovskites

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