A spectroscopic and theoretical study of the laser ablation rate of Al

Stafe, Mihai; Negutu, C.; Ducariu, A.; Puscas, Niculae N.

doi:10.1117/12.973753

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among these, we will focus on PLD technique in this paper, In PLD method, it is very important to control the plume dynamics in order to obtain thin films or nano crystals with high quality [10] . PLD involves the stages of target heating, melting, evaporation, ionization, re-solidification/recrystallization and condensation [11,12]. This technique was first used by Smith and Turner [13] in 1965 for the preparation of semiconductors and dielectric thin films and was established due to the work of Dijkkamp and coworkers [14] on hightemperature superconductors in 1987, this deposition technique has been intensively used for all kinds of oxides, nitrides, or carbides, and also for preparing metallic systems and even polymers or fullerenes.…”

Section: ‫الرقيقة‬ ‫لالغشية‬ ‫الكھربائية‬ ‫و‬ ‫التركيبية‬ ‫الخصائص‬mentioning

confidence: 99%

Morphology and electrical properties of Cu X Zn1-XO thin films prepared by PLD technique

Nasir¹

2019

IJP

View full text Add to dashboard Cite

Cu X Zn1-XO films with different x content have been prepared bypulse laser deposition technique at room temperatures (RT) anddifferent annealing temperatures (373 and 473) K. The effect of xcontent of Cu (0, 0.2, 0.4, 0.6, 0.8) wt.% on morphology andelectrical properties of CuXZn1-XO thin films have been studied.AFM measurements showed that the average grain size values forCuXZn1-xO thin films at RT and different annealing temperatures(373, 473) K decreases, while the average Roughness values increasewith increasing x content. The D.C conductivity for all filmsincreases as the x content increase and decreases with increasing theannealing temperatures. Hall measurements showed that there aretwo types of conductance (n- type and p-type charge carriers). Alsothe variation of drift velocity (vd), carrier life time (), and free meanpath (l) with different x content and annealing temperatures weremeasured.

show abstract

Section: ‫الرقيقة‬ ‫لالغشية‬ ‫الكھربائية‬ ‫و‬ ‫التركيبية‬ ‫الخصائص‬mentioning

confidence: 99%

Morphology and electrical properties of Cu X Zn1-XO thin films prepared by PLD technique

Nasir¹

2019

IJP

View full text Add to dashboard Cite

show abstract

A spectroscopic and theoretical study of the laser ablation rate of Al

Cited by 1 publication

References 0 publications

Morphology and electrical properties of Cu X Zn1-XO thin films prepared by PLD technique

Morphology and electrical properties of Cu X Zn1-XO thin films prepared by PLD technique

Contact Info

Product

Resources

About