A SPICE Model for GaN-Gate Injection Transistor (GIT) at Room Temperature

Abstract

In this paper, an equivalent circuit model is developed for a commercial Gallium Nitride (GaN) gate injection transistor (GIT) device at room temperature. The I-V and C-V characteristics are extracted from the commercial device datasheet and fitted in MATLAB. The fitted equations are realized as a combination of behavioral circuit components to be carried out in SPICE simulation. The equivalent circuit model is tested in a simple configuration for I-V curve simulation through varying of parameters and then in a simple boost configuration typical for power electronics applications to check for convergence and expected results.

Improved Model of a Gallium Nitride HEMT for High Power Application

“…Many functions have been tested, and the exponential one proved its superiority due to its nature; which matches the fitted curves. The fitted equations ( 1)-(3) [16], [17], for C DS , C GS , C GD , and are acquired and are shown in equations ( 7)-( 9), in pF (Pico Farads): + + Ciss =65.006e (-0.23172V ds ) +612.38e (-0.0001336V ds )…”

“…The equivalent circuit for a model of GaN HEMT is verified in a simple structure for the simulation I-V curve of variable parameters. In [16,17], the Panasonic GIT (Gate Injection Transistor) [18] is the commercial device modeled in that paper, and its data sheet is open to the public. The recessed HEMT operates by reducing the thickness of the AlGaN barrier in the channel, resulting in a two-dimensional electron gas (2DEG).…”