A spinning current circuit for nanotesla range resolution in Hall measurements

Mosser, V.; Matringe, Nicolas

doi:10.1109/sas.2016.7479629

Cited by 5 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Offset voltages are usually caused by mechanical stress, thermal gradients, geometrical errors, defects, and other irregularities within the device [24], [25]. Implementing current-spinning has been shown to reduce the offset voltage by a factor of over 1000 [26], [27]. In this method, detailed in [24], the direction and polarity of the sourcing and sensing contacts are swapped, resulting in eight total configurations (phases) in which the Hall voltage is measured.…”

Section: A Device Operation and Shape Optimizationmentioning

confidence: 99%

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

et al. 2019

View full text Add to dashboard Cite

The current-and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths on sensitivity and sensor offset was evaluated. Calculations that take into account the shape of the device show that devices with point-like contacts have the highest current-scaled sensitivity (68.9 V/A/T), while devices with contacts of equal length to their non-contact sides have the highest voltage-scaled sensitivity (86.9 mV/V/T). The sensitivities of the two other devices follow the predicted trends closely. All the devices have offsets less than 20 µT at low supply current operation (< 300 µA) and most remain below 35 µT at higher supply current (up to 1.2 mA). The consistent low offsets across the devices imply that the choice of Hall-effect sensor geometry should mainly depend on whether the device is currentbiased or voltage-biased and the frequency at which it will operate. This work demonstrates that GaN Hall-effect sensor performance can be improved by adjusting the geometry of the Hall-effect plate specific to its function (e.g., power electronics, navigation, automotive applications).Index Terms-Hall effect, gallium nitride, AlGaN/GaN, InAlN/GaN, offset voltage, sensitivity, geometry. Engineering

show abstract

Section: A Device Operation and Shape Optimizationmentioning

confidence: 99%

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

et al. 2019

View full text Add to dashboard Cite

show abstract

“…R2 is the device under analysis. The transimpedance plot obtained from Tspice [4] is shown in Fig. 3, where both labels and cursors were added to highlight specific values.…”

Section: A Noise Analysis With Spicementioning

confidence: 99%

“…In other words, communication systems impose the design of LOs with reduced noise and low power consumption [3]. Even more, silicon based transducers for translating physical variables into electrical ones not only requires suppress 1/f noise, but the remaining white noise due both the conditioning circuitry and the transducer output impedance [4]. White noise is a signal with a constant power spectral density with respect to frequency, implying that it is made up of many frequency components.…”

Section: Introductionmentioning

confidence: 99%

Nyquist Model based Thermal Noise AnalysisFrom Passive Components to CMOS Circuits

Sandoval-Ibarra¹,

Guadalajara²,

Cisneros³

2021

IJETAE

View full text Add to dashboard Cite

The analysis of thermal noise in network components that have resistive properties is presented. Noise analysis, based on the Nyquist model, is calculated as the rms (voltage or current equivalent) noise generated by a transimpedance, which is the concept used by general-purpose circuit simulators like Spice. It shows how this concept is used and understood in RC circuits, and how to evaluate its effect in analog circuits, particularly in the design of CMOS integrated circuits. It is shown that the magnitude of the noise generated by a transistor is not of interest, but the net effect of all sources of thermal noise in circuits and systems, fundamentally, when the miniaturization of the transistor implies reducing the value of the supply voltages. The ultimate purpose of this contribution is to highlight the importance of noise analysis using fundamentals of circuit theory and identify the variables under the designer's control to minimize their effect on the performance of the circuits under development.

show abstract