A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure

Abstract

In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO2/Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO2, which has a resistivity in the range of 50–80 Ω∙cm. The I–V curve obtained in dark condition evidences the structure a rectifying junction, which is further confirmed by placing external bias. Compared to the resistance state modulated by electric field only in dark (without illumination), the switching voltage driving the resistance state of the structure from one state to the other, shows clear shift under a spot laser illumination. Remarkably, the switching voltage shift shows a dual dependence on the illumination position and power of the spot laser. We ascribe this dual dependence to the electric filed produced by the redistribution of photo-generated carriers, which enhance the internal barrier of the hetero-junction. A complete theoretical analysis based on junction current and diffusion equation is presented. The dependence of the switching voltage on spot laser illumination makes the n-type Mn-doped ZnO/SiO2/Si structure sensitive to light, which thus allows for the integration of an extra functionality in the ZnO-based photoelectric device.

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

“…Here, Lu et al. has also demonstrated a light modulated resistance switching effect in traditional system of n‐type Mn‐doped ZnO/SiO 2 /Si structure . Figure shows the I–V curves in this structure respectively with different illumination position, different laser power and in dark condition.…”

“…f) Schematic of the switching process under laser irradiation. Reproduced with permission . Copyright 2019, Springer Nature.…”

Effects of Cu–Zn phases on electronic properties in ZnO:Cu films

“…Moreover, H impurities are also possible, as a shallow donor generally exists in ZnO materials, producing n ‐type conductivity. Currently, high‐quality n ‐type ZnO films with good photoelectric performance have been described in the literature . However, the acceptor dopants in p ‐type ZnO films generally have a deep acceptor level, which is difficult to ionize completely to provide sufficient holes.…”