1988
DOI: 10.1016/0168-583x(88)90329-1
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A sputtered neutral mass spectrometer with high current, low energy ion bombardment

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Cited by 13 publications
(4 citation statements)
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“…Electron-beam postionization has also been utilized to enhance ionization efficiency. Direct ionization, by an electron beam directed through the sputtered flux or by the use of a low-pressure plasma, , has been accomplished and configured for imaging experiments. The sensitivity of these measurements is compared in terms of the useful yield, defined as the ratio of detected ions to sputtered atoms.…”
Section: Postionization and Sensitivity Enhancementmentioning
confidence: 99%
“…Electron-beam postionization has also been utilized to enhance ionization efficiency. Direct ionization, by an electron beam directed through the sputtered flux or by the use of a low-pressure plasma, , has been accomplished and configured for imaging experiments. The sensitivity of these measurements is compared in terms of the useful yield, defined as the ratio of detected ions to sputtered atoms.…”
Section: Postionization and Sensitivity Enhancementmentioning
confidence: 99%
“…In some applications, the fast beam component may contribute significantly to the total ionization rate. In EBE plasma discharges [10,11], where the beam energy E b is close to that corresponding to the maximum in the ionization cross section of the neutral gas (for example E b ≈ 100 eV in Ar), the beam is almost totally responsible for sustaining the plasma against losses. At these energies, and for low-temperature backgrounds (T e = 2-10 eV), a ratio p = ν bp /ν ep > 10-100 may be attained.…”
Section: The Effect Of Ionization By the Beam Electronsmentioning
confidence: 99%
“…Here electrons can gain significant translational energy from their acceleration across the potential step, resulting in a bulk electron drift. One type of plasma device that exploits the presence of 'double layer-accelerated' electrons is the DC electron-beam-excited (EBE) plasma sources developed in Japan for sputtering and etching applications [10]. The beam electrons of typical energy 60-150 eV, guided by a linear magnetic field, sustain a secondary, highdensity discharge, N e 10 17 m −3 ; the remnant of the electron beam at the substrate (relative density N b /N e 0.1) sinks the surface potential below values normally attained in purely thermal electron plasmas.…”
Section: Introductionmentioning
confidence: 99%
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