A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO/sub 3/ and RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gb-scale DRAMs

Yamamichi, Shintaro; Lesaicherre, Pierre‐Yves; Yamaguchi, Haruhisa; Takemura, Koichi; Sone, S.; Yabuta, Hisato; Satô, Kenji; Tamura, Takashi; Nakajima, Ken; Ohnishi, Shigeo; Tokashiki, K.; Hayashi, Y.; Kato, Yoshitake; Miyasaka, Yoichi; Yoshida, Masamichi; Ono, Hiroakira

doi:10.1109/16.595934

Cited by 46 publications

(13 citation statements)

References 6 publications

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“…In order to balance the lower volatility of (2), increasing of the reservoir temperature to 80 uC and reduction of the system pressure to 1 Torr were employed to assist the vaporization and transport of the precursor. It was observed that the successful deposition of an Ru thin film was realized at all three temperature settings (275, 325 and 375 uC), which were slightly lower than those used for the hfac complex (1). Concurrently, the electrical resistivity of the thin films deposited at temperatures below 325 uC was found to be significantly greater than samples obtained at 375 uC.…”

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confidence: 83%

“…13 For deposition of Ru metal, the sample reservoir was maintained at 28 uC and 50 uC for complex (1), and 80 uC for complex (2); while RuO 2 thin films were deposited using pure O 2 carrier gas. The flow rate of the carrier gas was adjusted to 10-20 sccm, the sample reservoir was loaded with y50 mg of CVD source reagent, and the deposition time was set to a period of 20-40 min.…”

Section: Cvd Proceduresmentioning

confidence: 99%

“…Synthesis of complex (1). A sample of Ru 3 (CO) 12 (0.5 g, 0.78 mmol), six equivalents of (hfac)H (0.7 mL, 4.9 mmol), and 50 mL of anhydrous pentane together with a stirring bar were added into a 160 mL stainless steel autoclave.…”

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confidence: 99%

“…1 The advantages of ruthenium over other conducting materials include: lower resistivity, good etching ability, good barrier properties against oxygen diffusion, high resistance against capacitor shorting due to the formation of hillocks, severe polarization fatigue and aging.…”

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confidence: 99%

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Deposition of Ru and RuO2 thin films employing dicarbonyl bis-diketonate ruthenium complexes as CVD source reagents

et al. 2003

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Reaction of Ru 3 (CO) 12 with 6 eq. of b-diketone ligands (hfac)H, (tmhd)H, (acac)H and (tfac)H at 160-170 uC in a hydrocarbon solvent (pentane or hexane) affords the diketonate complexes [Ru(CO) 2 (hfac) 2 ] (1), [Ru(CO) 2 (tmhd) 2 ] (2), [Ru(CO) 2 (acac) 2 ] (3) and [Ru(CO) 2 (tfac) 2 ] (4) in high yields. These ruthenium complexes were characterized by spectroscopic methods; a single crystal X-ray diffraction study was carried out on one isomer of the tfac complex (4a), revealing an octahedral coordination geometry with two CO ligands located at cis-positions and with the CF 3 groups of the b-diketonate ligands trans to the CO ligands. Thermogravimetric analysis of complex (1) showed an enhanced volatility compared to the parent acac complex (3), attributed to the CF 3 group reducing intermolecular attraction. Employing complexes (1) and (2) as CVD source reagents, ruthenium thin films can be deposited at temperatures of 350 uC-450 uC under an H 2 atmosphere or at temperatures of 275 uC-400 uC using a 2% mixture of O 2 in argon as carrier gas. For deposition carried out using complex (1) and under 100% O 2 atmosphere, RuO 2 thin films with a preferred (200) orientation were obtained. The as-deposited thin films were characterized by surface and physical analytical techniques, such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction analysis (XRD) and four-point probe measurement.Ruthenium-containing thin films show great promise for fabricating bottom electrodes or non-corrosive diffusion barriers for next generation, tantalum oxide (Ta 2 O 5 ), barium strontium titanate (BST) and lead zirconate titanate (PZT) based nonvolatile random access memory (RAM) devices.1 The advantages of ruthenium over other conducting materials include: lower resistivity, good etching ability, good barrier properties against oxygen diffusion, high resistance against capacitor shorting due to the formation of hillocks, severe polarization fatigue and aging.2 Moreover, its oxide phase, RuO 2 , which crystallizes in the rutile structure, belongs to a class of conductive oxide materials that exhibit excellent chemical stability at higher temperatures in O 2 ambient. These combined characteristics make RuO 2 an idea candidate for the fabrication of diffusion barriers for contact metallizations in very large scale integration (VLSI) applications, buffer layers of high T c superconducting films on silicon, and electrodes of ferroelectric thin films.Chemical vapor deposition (CVD) has received more attention in recent years, particularly in depositing these ruthenium-containing thin films, for its obvious capability of alleviating problems associated with the physical vapor deposition or sputtering process, such as low conformal coverage, poor crystallinity, and high stress level. As a result, several Ru metal-containing complexes have been examined as potential CVD precursors, including (a) ruthenocene 3 and its alkyl substituted derivatives such as Ru (C 5 hfb~hexafluoro-2-butyne, and Ru 3 ...

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mentioning

confidence: 83%

Section: Cvd Proceduresmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Deposition of Ru and RuO2 thin films employing dicarbonyl bis-diketonate ruthenium complexes as CVD source reagents

et al. 2003

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“…The same bilayer structure has already been proposed and investigated within a RuO2/Ru/TiN/TiSix/poly-Si storage node. 86 Oxygen transport studies have also been reported for Pt and Re protective layers, considered also as bottom gate electrodes for MOS-like devices. 87,88,89 In the case of gate dielectric layers for CMOS and memory (DRAM) devices, several (usually high-K) binary oxides such as Ta2O5, 90,91 Y2O3, 92,93 Al2O3, 91,94,95,96 HfO2, 97,98,99,100 ZrO2, 34,101,102,103 and TiO2, 104,105,106 and also perovskite materials such as SrTiO3 and (Ba,Sr)TiO3 have been investigated, 107,108 according to their electrical and/or other physical properties after/or during growth.…”

Section: Current Status 1231 Microelectronic (Dram and Cmos) Devicesmentioning

confidence: 99%

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

Ribera¹

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Ruthenium Thin Films Grown by Atomic Layer Deposition

Aaltonen¹,

Alén

Ritala

et al. 2003

Chemical Vapor Deposition

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Thin films of metallic ruthenium were grown by atomic layer deposition (ALD) in the temperature range 275±400 C using bis(cyclopentadienyl)ruthenium (RuCp 2 ) and oxygen as precursors. The ruthenium films were grown on thin Al 2 O 3 and TiO 2 films on glass. X-ray diffraction (XRD) analysis indicated that the films were polycrystalline metallic ruthenium and scanning electron microscopy (SEM) studies showed that the films had excellent conformality. The impurity content of the films, as measured by time-of-flight elastic recoil detection analysis (TOF-ERDA), were very low. All the films had resistivities below 20 lX cm.

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A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO/sub 3/ and RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gb-scale DRAMs

Cited by 46 publications

References 6 publications

Deposition of Ru and RuO2 thin films employing dicarbonyl bis-diketonate ruthenium complexes as CVD source reagents

Deposition of Ru and RuO2 thin films employing dicarbonyl bis-diketonate ruthenium complexes as CVD source reagents

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

Ruthenium Thin Films Grown by Atomic Layer Deposition

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