2015 International Conference on Electrical and Information Technologies (ICEIT) 2015
DOI: 10.1109/eitech.2015.7162976
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A static large signal model of an Heterojunction Phototransistor SiGe/Si for opto-microwave applications

Abstract: In this paper a static large-signal model of SiGe/Si double Heterojunction Phototransistor (HPT) based on Ebers-Moll BJT model, is presented, analyzed, and developed for circuits design and simulations. The modeled HPT has been designed and realized in HBT technology from Telefunken Semiconductors foundry. Our model includes many high-order effects to achieve accuracy for most physical phenomena like the avalanche (breakdown characteristics), Webster, Charge storage, Self-heating and Early effects. The validit… Show more

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