A stochastic encoder using point defect in two-dimensional materials

Abstract

Defects pose a significant challenge to the reliability of electronic devices, particularly when dealing with scaled dimensions in the silicon microelectronic industry. Consequently, extensive efforts have been made to eliminate these defects from devices through the optimization of growth and fabrication processes. However, in the realm of emerging nanomaterials, such as two-dimensional semiconductors, a different scenario unfolds, where defects are prevalent. It is crucial to comprehend how these defects can impact device reliability. In this study, we employ a multifaceted approach, encompassing atomistic imaging, density functional theory calculations, device modeling, and low-temperature transport experiments, to unveil the implications of defects on device reliability. Specifically, we investigate their influence on random telegraph signals. On a parallel track, it is worth noting that defects have proven to be beneficial in numerous quantum and energy-harvesting applications. Surprisingly, their potential for computational purposes remains largely untapped. In our study, we harness defects in aggressively scaled 2D transistors to accelerate an inference engine based on a stochastic spiking neural network, offering remarkable noise resilience. In conclusion, our investigation underscores the critical importance of comprehending and leveraging intrinsic point defects in 2D materials, both as challenges to reliability and as opportunities for neuromorphic computing.

Advanced EUV patterning of 2D TMDs for CMOS integration

“…Figure 9 shows the AFM images of the films, where grain sizes of around 1µm cover about 50% of the surface, there are areas of multilayer and bulk like film present as well. The low-temperature photoluminescence measurements on as grown samples show the peak at ~1.6 eV linked to defect bound exciton of WSe2 [16]. After exposing samples to EUV dose of 300 mJ/cm 2 and 5J/cm 2 , we observe that the defect peak has shifted towards ~1.37 eV which could be an indication of bulk-like structures [17].…”

“…Figure 10 a) PL measurement of as grown WSe2 film at 77 kelvin with different laser power, the defect bound exciton shoulder appearing at higher powers, b) PL response of MOCVD grown WSe2 at 77 kelvin from a preprint publication confirming the location of the defect bound exciton at 1.64 eV[16], c) PL response of the EUV exposed WSe2 film at 80 kelvin with an inset from the supplementary information of the publication[17] confirming the location of the bulk-like peak at 1.37 eV (indirect bandgap emission).…”