A stochastic model for diffusion in a semiconductor layer under the effect of an external potential and non-uniform temperature

Aragie, Berhanu; Daba, Tesema; Pellicane, Giuseppe

doi:10.1016/j.physa.2022.127197

Cited by 1 publication

(1 citation statement)

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“…In the field of semiconductor physics has received a considerable attention due to the problem of how to adjust the conductivity of the semiconductor by adding the impurities into their crystal lattice and manipulating the level of conductivity on the type and amount of impurities. Recent studies showed that the conductivity of the semiconductor is controlled by also changing the strength of the background temperature along the semiconductor layer [15][16][17][18][19][20][21][22][23][24][25]. The background temperature in a semiconductor affects the concentration and diffusivity of impurities which are responsible for conduction.…”

Section: Introductionmentioning

confidence: 99%

Thermally activated escape rate and dynamics of a particle under a harmonic potential

Abebe,

Birhanu,

Bassie

2024

J. Phys. Commun.

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In this paper, we study the dynamics of particles along a semiconductor layer by imposing a confinement potential assisted by both thermal noise strength D and trap potential φ. By applying a nonhomogeneous cold temperature alongside the uniform background temperature, the system is driven towards a phase transition. When a weak signal is pass across a semiconductor layer, thethermally activated particles become easily hop from one lattice site to another lattice site. We perform a numerical simulation of the trajectory of a particle under a harmonic potential represents a bistable and tristable effective potential as a function of thermal noise. As a result, at an optimal level of noise, the particle synchronizes with a weak periodic signal.

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