A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications

Polleux, Jean-Luc; Moutier, F; Billabert, Anne‐Laure; Rumelhard, Christian; Sonmez, E.; Schumacher, Hermann

doi:10.1109/mwp.2003.1422840

Cited by 27 publications

(22 citation statements)

References 3 publications

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“…Silicon detector technology in silicon processes has been quite well established [43][44][45][46]. For radiation at 0.55 micron, pn configurations offer up to 0.6 A.W -1 at around 1-10 GHz, while for p-i-n configurations offer up to 0.3 A.W -1 and up to 20 GHz but at larger unit volumes of silicon.…”

Section: Cmos Optical Sourcesmentioning

confidence: 99%

“…In the absence of an efficient light source at 1550nm, these systems currently operate mainly with external light sources. Si-Ge detector structures which is reasonable compatible with mainstream silicon technology [1][2][3][4][5][6], has hitherto been developed that offers detection at 850 nm wavelength and in high-speed SiGe technologies [45,46,47].…”

Section: Introductionmentioning

confidence: 99%

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Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology

Ogudo

Snyman

Poulleux

et al. 2014

Optical Interconnects XIV

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Micron dimensioned on-chip optical links of 50 micron length, utilizing 650 -850 nm propagation wavelength, have been realized in a Si Ge bipolar process. Key design strategies is the utilization of high speed avalanche based Si light emitting devices (Si Av LEds) in combination with silicon nitride based wave guides and high speeds Si Ge based optical detectors. The optical source, waveguide and detector were all integrated on the same chip. TEOS densification strategies and state of the art Si-Ge bipolar technology were further used as key design strategies. Best performances show up to 25 GHz RF carrier modulation and -40dBm total optical link budget loss with a power consumption of only 0.1 mW per GHz bandwidth. Improvement possibilities still exist. The process used is in regular production. The technology is particularly suitable for application as optical interconnects utilizing low loss, side surface, waveguide to optical fibre coupling.

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Section: Cmos Optical Sourcesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology

Ogudo

Snyman

Poulleux

et al. 2014

Optical Interconnects XIV

View full text Add to dashboard Cite

show abstract

“…Silicon detector technology in silicon processes has been quite well established 46,47,48,49 . For radiation at 0.55 micron, pn configurations offer up to 0.6 A.W -1 at around 1-10 GHz, while for p-i-n configurations offer up to 0.3 A.W -1 and up to 20 GHz but at larger unit volumes of silicon.…”

Section: Silicon Germanium Bipolar Technologymentioning

confidence: 99%

“…In the absence of an efficient light source at 1550nm wavelength, these systems currently operate mainly with external light sources. A Si-Ge detector structure which is reasonable compatible with mainstream silicon technology 4,9 , has also been developed that offers detection at 850 nm wavelength and in high-speed SiGe technologies 48,49,50 . Recently, a Ge-on-Si laser source was announced by Lui et al in 2010 13 .…”

Section: Introductionmentioning

confidence: 99%

Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology

et al. 2014

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Si Avalanche based LEDs technology has been developed in the 650 -850nm wavelength regime 1, 2 . Correspondingly, small micro-dimensioned detectors with pW/µm 2 sensitivity have been developed for the same wavelength range utilizing Si-Ge detector technology with detection efficiencies of up to 0.85, and with a transition frequencies of up to 80 GHz 3 .A series of on-chip optical links of 50 micron length, utilizing 650 -850 nm propagation wavelength have been designed and realized, utilizing a Si-Ge radio frequency bipolar process. Micron dimensioned optical sources, waveguides and detectors were all integrated on the same chip to form a complete optical link on-chip. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art Si-Ge bipolar detector technologies were used as key design strategies. Best performances show optical coupling from source to detector of up to 10GHz and -40dBm total optical link budget loss with a potential transition frequency coupling of up to 40GHz utilizing Si-Ge based LEDs. The technology is particularly suitable for application as on-chip optical links, optical MEMS and MOEMS, as well as for optical interconnects utilizing low loss, side surface, waveguide-to-optical fiber coupling. Most particularly is one of our designed waveguide which have a good core axis alignment with the optical source and yield 10GHz -30dB on-chip micro-optical links as shown in Fig 9 (c). The technology as developed has been appropriately IP protected.

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“…However, according to [15], at a given minimum emitter width, the reduction of the emitter length leads to a significant reduction of speed due to the difficulties of the electron flow whereas doubling the emitter width significantly increases the speed. Our laboratory presented the first single layer SiGe HPT in 2003 [4] and we have illustrated the impact of the substrate photo-current on the speed of the HPT in [3] by using the same SiGe HPT topology. This paper is a furtherance of our previous works that explores further the frequency response limitations of the device.…”

Section: Introductionmentioning

confidence: 99%

Study of Lateral Scaling Impact on the Frequency Performance of SiGe Heterojunction Bipolar Phototransistor

Tegegne

Viana

Grzeskowiak

et al. 2018

IEEE J. Quantum Electron.

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The influence of the lateral scaling such as emitter width and length on the frequency behavior of SiGe bipolar transistor is experimentally studied. Electrical transistors of different emitter sizes are designed and fabricated by using a commercial bipolar transistor technology. The effect of peripheral current and collector current spreading on electrical bipolar transistor performances are analyzed in regards to the state of the art. Furthermore, the lateral scaling effect on SiGe phototransistor electrical and opto-microwave frequency behavior is studied. The impact of the lateral flow of photo-generated carriers toward the optical opening in phototransistor structure is investigated. Moreover, the 2-D carrier flow effect on the opto-microwave frequency behavior of the phototransistor is characterized through optomicrowave scanning near-field optical microscopy measurements, in the course of which the intrinsic parameters, such as transit time and junction capacitances are extracted over the surface of the phototransistor. An intrinsic optical transition frequency of 6.5 GHz is measured for 10 × 10 µm 2 . Portugal, in 2010, and the Ph.D. degree in electronics, optoelectronics and systems from Université Paris-Est, Champs-sur-Marne, France, in 2014.Since 2010, he has been a Researcher with the ESYCOM Laboratory, ESIEE-Paris, Noisy-le-Grand, France. His research interest includes optoelectronic device developments, integration, and packaging for low cost radio-over-fiber technology applications.Jean-Luc Polleux received the master's/Diplôme d'ingénieur degree in microelectronic from ENSEIRB, Bordeaux, France, and the DEA degree in electronic and telecommunications from the University of Bordeaux 1, France, both in 1997, and the Ph.D. degree in the optomicrowave from CNAM, Paris, in 2001. He joined ESIEE-Paris, Université Paris-Est, France, and the joint ESYCOM Laboratory, where he is currently an Associate Professor. He is also an Administrator of Optics'Valley, Ile-de-France region, and the Head of the International Master of Electronics, ESIEE Paris, UPE. He published over 60 scientific publications and two patents. His current research involves microwave-photonics devices and systems for radio-over-fibre applications with special emphasis on microwave phototransistors (SiGe/Si and InGaAs/InP), silicon-based integration and packaging, analogue VCSELs, and opto-microwave devices modeling. He co-organized three international workshops and co-chaired the local committee of the French microwave conference JNM2013. He was a Guest

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A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications

Cited by 27 publications

References 3 publications

Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology

Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology

Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology

Study of Lateral Scaling Impact on the Frequency Performance of SiGe Heterojunction Bipolar Phototransistor

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